NAND MEMORY

专利名称：NAND MEMORY发明人：COULSON, RICHARD, L.申请号：US2009048480申请日：20090624

公开号：WO2010002666A3公开日：20100415

摘要：Disclosed herein is a method and apparatus to refresh/rewrite the data in aNAND solid state storage device (\"SSD\") only when it needs to be re-written. Uponpower-up, the SSD assumes that it may have been a long time since some of its data waslast written, and a background task to scan through all the data is started in the SSD.During idle periods, the entire contents of the drive is read. If a location is read and it hasmore than \"bit error threshold\" bits (for example 3 bits if there is capability to correct 8bits) in error before error correction is applied, it is assumed that this memory location isretaining the data only marginally, and the corrected data should be re-written to a newlocation, or alternatively re-written in the same location. The corrected data is then re-written to a new location or the same location.

申请人：INTEL CORPORATION,COULSON, RICHARD, L.

代理人：MCCRACKIN, Ann, M. et al.

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