专利名称：Method for producing semiconductor wafer发明人：Motoharu Miyashita,Norio Hayafuji,Yutaka
Mihashi
申请号：US07/977154申请日：19921116公开号：US05279077A公开日：19940118
摘要：In a method for forming a semiconductor wafer with an orientation flat along acleavage plane, a groove or hole is formed in the substrate on a line along which thesubstrate is cleaved to form an orientation flat and the substrate is treated to produce amirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from thegroove or hole to form the orientation flat. Accordingly, edges of the cleavage plane arenot rounded due to the surface treatment. In addition, the substrate is easily cleavedalong the cleavage plane from the groove or the hole. As a result, a semiconductor waferhaving a sharp cleavage plane as an orientation flat is produced with improved yield, andalignment is performed with high precision in a subsequent process, such asphotolithography.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构：Leydig, Voit & Mayer
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