Read only memory device

专利名称：Read only memory device发明人：Uchino, Yukinori 210, Toshiba

Shinkoyasu,Suzuki, Hiroaki

申请号：EP86108200.6申请日：19860616公开号：EP0206205A2公开日：19861230

专利附图：

摘要：A read only semiconductor memory device which comprises a plurality oftransistor pairs (PQmn, NQmn) comprising two transistors of one and the otherconductivity types arranged in a matrix manner, thus allowing only one of the two

transistors constituting each transistor pair to be operated to obtain a predeterminedlogical output. By employing a structure of the transmission gate type as the. transistorpair, high speed and reliable operation for raising a potential on the output line can berealized.

申请人：KABUSHIKI KAISHA TOSHIBA

地址：72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP

国籍：JP

代理机构：Hoffmann, Klaus, Dr. rer. nat.

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