专利名称：Method of fabricating lateral power
MOSFET having metal strap layer to reducedistributed resistance
发明人：Richard K. Williams,Mohammad Kasem申请号：US09/264602申请日：19990308公开号：US06159841A公开日：20001212
摘要：To reduce the distributed resistance in an integrated circuit die, a relatively thickmetal strap layer is deposited on a bus or other conductive path in the top metal layer.The metal strap layer is formed by etching a longitudinal channel in the passivation layerover the bus and plating a thick metal layer, preferably nickel, in the channel. The metalstrap layer dramatically reduces the resistance of the bus.
申请人：SILICONIX INCORPORATED
代理机构：Skjerven Morrill MacPherson LLP
代理人：David E. Steuber
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