N-channel TrenchMOS logic level FET
Rev. 3 — 17 May 2011
Product data sheet
1.Product profile
1.1General description
1.21.31.4http://oneic.com/
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
Q101 compliant
Suitable for thermally demanding Suitable for logic level gate drive environments due to 175 °C rating
sources
Applications
12 V and 24 V loads
Motors, lamps and solenoids
Automotive and general purpose power switching
Quick reference data
Table 1.Quick reference dataSymbolParameterConditions
MinTypMaxUnitVDSdrain-source Tj≥25°C; Tj≤175°C--55VvoltageIDdrain currentVGS=5V; Tmb=25°C; --18Asee Figure 1; see Figure 4Ptot
total power Tmb=25°C; see Figure 2
--51
W
dissipationStatic characteristicsRDSon
drain-source VGS=10V; ID=10A;Tj=25°C-5969mΩon-state resistance
VGS=4.5V; ID=10A; Tj=25°C--86mΩVGS=5V; ID=10A; Tj=25°C; -65
77
mΩ
see Figure 13
Avalanche ruggednessEDS(AL)S
non-repetitive ID=18A;Vsup≤55V; --33
mJ
drain-source
RGS=50Ω; VGS=5V; avalanche energy
Tj(init)=25°C; unclamped
NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
2.Pinning information
Table 2.Pin123mb
Pinning informationSymbolDescriptionGDSD
gatedrainsource
mounting base; connected to drain
21
3mb
DSimplified outlineGraphic symbol
Gmbb076SSOT428 (DPAK)
3.Ordering information
Table 3.
Ordering information
PackageName
BUK9277-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
VersionSOT428
Type number
BUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20112 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
4.Limiting values
Table 4.SymbolVDSVDGRVGSID
Limiting values
Parameter
drain-source voltagedrain-gate voltagegate-source voltagedrain current
Tmb=25°C; VGS=5V;seeFigure 1; see Figure 4
Tmb=100°C; VGS=5V; see Figure 1
IDMPtotTstgTjISISMEDS(AL)SEDS(AL)R
[1][2][3][4]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Tj≥25°C; Tj≤175°CRGS=20kΩ
Min---15-----55-55
Tmb=25°C
pulsed; tp≤10µs; Tmb=25°CID=18A; Vsup≤55V; RGS=50Ω; VGS=5V;Tj(init)=25°C; unclampedsee Figure 3
[1][2][3][4]
Max55551518137351175175187333-
UnitVVVAAAW°C°CAAmJJ
peak drain currenttotal power dissipationstorage temperaturejunction temperaturesource currentpeak source currentnon-repetitive drain-source avalanche energyrepetitive drain-source avalanche energy
Tmb=25°C; pulsed; tp≤10µs; see Figure 4
Tmb=25°C; see Figure 2
Source-drain diode
----
Avalanche ruggedness
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.Repetitive avalanche rating limited by an average junction temperature of 170 °C.Refer to application note AN10273 for further information.
BUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20113 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
20ID (A)15003aab510120Pder(%)8003aa16104050050100150Tmb (°C)2000050100150Tmb (°C)200Fig 1.Continuous drain current as a function of mounting base temperature 102IAL(A) 10Fig 2.Normalized total power dissipation as a function of mounting base temperature 003aab531(1)(2) 1(3)10-110-210-310-210-1 1t (ms) 10ALFig 3.Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche timeBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20114 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
102Limit RDSon = VDS / IDID (A) 10003aab51110 μs100 μs1 msDC10 ms100 ms 110-1 1 10VDS (V) 102Fig 4.Safe operating area; continuous and peak drain currents as a function of drain-source voltageBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20115 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
5.Thermal characteristics
Table 5.SymbolRth(j-mb)Rth(j-a)
Thermal characteristicsParameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
ConditionsMin-
Typ-71.4
Max2.93-
UnitK/WK/W
see Figure 5-
10Zth(j-mb)(K/W)δ = 0.51 0.2 0.1 0.05 0.0210−1 single shottpP03ne00δ =tpTtT10−210−610−510−410−310−210−1tp (s)1Fig 5.Transient thermal impedance from junction to mounting base as a function of pulse durationBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20116 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
6.Characteristics
Table 6.SymbolV(BR)DSSVGS(th)
Characteristics
Parameter
drain-source breakdown voltage
Conditions
ID=0.25mA;VGS=0V; Tj=25°CID=0.25mA;VGS=0V; Tj=-55°C
Min5550-10.5--------Typ---1.5--0.052259--65
Max--2.32-50010100100698615477
UnitVVVVVµAµAnAnAmΩmΩmΩmΩ
Static characteristics
gate-source threshold voltageID=1mA; VDS=VGS; Tj=-55°C;
see Figure 12
ID=1mA; VDS=VGS; Tj=25°C; see Figure 12
ID=1mA; VDS=VGS; Tj=175°C; see Figure 12
IDSSIGSSRDSon
drain leakage currentgate leakage currentdrain-source on-state resistance
VDS=55V;VGS=0V; Tj=175°CVDS=55V;VGS=0V; Tj=25°CVGS=15V;VDS=0V; Tj=25°CVGS=-15V;VDS=0V; Tj=25°CVGS=10V;ID=10A;Tj=25°CVGS=4.5V; ID=10A; Tj=25°CVGS=5V;ID=10A;Tj=175°C; see Figure 13
VGS=5V;ID=10A;Tj=25°C; see Figure 13
Dynamic characteristicsQG(tot)QGSQGDCissCossCrsstd(on)trtd(off)tfLDLS
total gate chargegate-source chargegate-drain chargeinput capacitanceoutput capacitance
reverse transfer capacitanceturn-on delay timerise time
turn-off delay timefall time
internal drain inductanceinternal source inductance
meausured from drain lead from package to centre of die; Tj=25°Cmeasured from source lead from package to source bond pad; Tj=25°C
IS=15A;VGS=0V; Tj=25°C; see Figure 16
IS=20A;dIS/dt=-100A/µs;
VGS=-10V;VDS=30V; Tj=25°CVDS=30V;RL=1.2Ω; VGS=5V; RG(ext)=10Ω; Tj=25°CVGS=0V;VDS=25V; f=1MHz; Tj=25°C;seeFigure 15ID=10A;VDS=44V;VGS=5V; see Figure 14
------------111.654409060104728332.57.5
---64311093------nCnCnCpFpFpFnsnsnsnsnHnH
Source-drain diodeVSDtrrQr
source-drain voltagereverse recovery timerecovered charge
---
0.853360
1.2--
VnsnC
BUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20117 of 15
http://oneic.com/
NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
60VGS (V) = 8ID(A)4003nd43120RDSon(mΩ)10003nd4210765804206030024682.210VDS (V)402468VGS (V)10Fig 6.Output characteristics: drain current as a function of drain-source voltage; typical values03aa36Fig 7.Drain-source on-state resistance as a function of gate-source voltage; typical values1503nd4010-1ID(A)10-2gfs(S)1010-3min10-4typmax510-510-6012VGS (V)3005101520ID (A)25Fig 8.Sub-threshold drain current as a function of gate-source voltageFig 9.Forward transconductance as a function of drain current; typical valuesBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20118 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
25ID(A)2003nd415VGS(V)4VDD = 14(V)VDD = 44(V)03nd391531025Tj = 175 °C0012Tj = 25 °C34VGS (V)5100510QG (nC)15Fig 10.Transfer characteristics: drain current as a function of gate-source voltage; typical values2.5VGS(th)(V)2max03aa33Fig 11.Gate-source voltage as a function of turn-on gate charge; typical values180RDSon(mΩ)130003aab504VGS (V) = 33.43.8451.5typ1min800.50-6030060120Tj (°C)180010203040I (A)50DFig 12.Gate-source threshold voltage as a function of junction temperatureFig 13.Drain-source on-state resistance as a function of drain current; typical valuesBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 20119 of 15
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
5VGS(V)4VDS (V) = 14 3VDS (V) = 44003aab5081200C (pF)800Ciss003aab50624001Crss10-1 1 10 102VDS (V)Coss00510QG (nC)15010-2Fig 14.Gate-source voltage as a function of gate charge; typical valuesFig 15.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values003aab50950IS (A)403020Tj = 175 °CTj = 25 °C1000.00.51.0VSD (V)1.5Fig 16.Source current as a function of source-drain voltage; typical valuesBUK9277-55AAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2011. All rights reserved.
Product data sheetRev. 3 — 17 May 201110 of 15
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