FEATURES z Complementary to S9015W
MARKING: J6
SOT-323 Plastic-Encapsulate Transistors
SOT- 3 23 =====
=
1. BASE 2. EMITTER 3. COLLECTOR S9014W TRANSISTOR (NPN)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter VCBO VCEO VEBO IC PC Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value Units 50 45 5 0.1 0.2 150 -55-150
V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE
Test conditions
MIN
TYP
MAX
UNIT
IC= 100μA, IE0 50 V IC= 0.1mA, IB0 45 V IE=100μA, IC0 5 V VCB=50 V , IE0 0.1 μA VCE=35V , IB0 0.1 μA VEB= 3V , IC0 0.1 μA VCE=5V, IC= 1mA
200
1000 0.3 1
V V
VCE(sat) IC=100 mA, IB= 5mA VBE(sat) IC=100 mA, IB= 5mA
fT
VCE=5V, IC= 10mA
f=30MHz
150 MHz
CLASSIFICATION OF hFE Rank Range
L H 200-450 450-1000
Typical Characteristics S9014W
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