SEMICONDUCTOR SWITCH DEVICE AND METHOD OF MANUFACT

专利名称：SEMICONDUCTOR SWITCH DEVICE AND

METHOD OF MANUFACTURINGSEMICONDUCTOR SWITCH DEVICE

发明人：Tsunekazu SAIMEI,Kazuya KOBAYASHI,Koshi

HIMEDA,Nobuyoshi OKUDA

申请号：US13296842申请日：20111115

公开号：US20120091513A1公开日：20120419

专利附图：

摘要：A semiconductor switch device and a method of manufacturing the

semiconductor switch device are provided. The semiconductor switch device includessemiconductor elements on a single semiconductor substrate. At least one of thesemiconductor elements constitutes a switch circuit and at least one other of thesemiconductor elements constitutes a logic (connection) circuit. Each semiconductorelement includes a recess, a gate electrode in the recess, a drain electrode, and a sourceelectrode. In one representative aspect, the gate electrode in the switch circuit can have arectangular external shape in section, and the gate electrode in the connection circuit hasa shape in section other than rectangular.

申请人：Tsunekazu SAIMEI,Kazuya KOBAYASHI,Koshi HIMEDA,Nobuyoshi OKUDA

地址：Kyoto-fu JP,Kyoto-fu JP,Kyoto-fu JP,Kyoto-fu JP

国籍：JP,JP,JP,JP

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