NZT651Discrete POWER & SignalTechnologiesNZT651CECSOT-223BNPN Current Driver TransistorThis device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 4P.Absolute Maximum Ratings* TA = 25°C unless otherwise notedSymbolVCEOVCBOVEBOICTJ, TstgCollector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector Current - ContinuousOperating and Storage Junction Temperature RangeParameterValue60805.04.0-55 to +150UnitsVVVA°C*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbolPDRθJACharacteristicTotal Device DissipationDerate above 25°CThermal Resistance, Junction to AmbientMax*NZT6511.29.7103UnitsWmW/°C°C/W*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.元器件交易网www.cecb2b.com
NZT651NPN Current Driver Transistor(continued)Electrical Characteristics TA = 25°C unless otherwise notedSymbolParameterTest ConditionsMinMaxUnitsOFF CHARACTERISTICSV(BR)CEOV(BR)CBOV(BR)EBOICBOIEBOCollector-Emitter Sustaining VoltageCollector-Base Breakdown VoltageEmitter-Base Breakdown VoltageCollector-Cutoff CurrentEmitter-Cutoff CurrentIC = 10 mA, IB=0IC = 100 µA, IE = 0IE = 100 µA, IC = 0VCB = 80 V, IE = 0VEB = 4.0 V, IC = 060805.01000.1VVVnAµAON CHARACTERISTICS*hFEDC Current GainIC = 50 mA, VCE = 2.0 VIC = 500 mA, VCE = 2.0 VIC = 1.0 A, VCE = 2.0 VIC = 2.0 A, VCE = 2.0 VIC = 1.0 A, IB = 100 mAIC = 2.0 A, IB = 200 mAIC = 1.0 A, IB = 100 mAIC = 1.0 A, VCE = 2.0 V757575400.30.51.21.0VVVVVCE(sat)VBE(sat)VBE(on)Collector-Emitter Saturation VoltageBase-Emitter Saturation VoltageBase-Emitter On VoltageSMALL SIGNAL CHARACTERISTICSfTCurrent Gain - Bandwidth ProductIC = 50 mA, VCE = 5.0 V,f = 100 MHz 75MHz*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%DC Typical CharacteristicsTypical Pulsed Current Gainvs Collector Current200125 °CVC S - COLLECTOR-EMITTER VOLTAGE (V)EATh F E - TYPICAL PULSED CURRENT GAINCollector-Emitter SaturationVoltage vs Collector Current 32.521.510.500.01- 40 ºC25 °CV = 5VCE β = 1015010025 °C50- 40 ºC125 °C00.010.11I - COLLECTOR CURRENT (A)C100.11I - COLLECTOR CURRENT (A)CP4P10元器件交易网www.cecb2b.com
NZT651NPN Current Driver Transistor(continued)DC Typical Characteristics (continued)Base-Emitter SaturationVoltage vs Collector Current 1- 40 ºCVB ( O -EN) BASE-EMITTER ON VOLTAGE (V)V E A - BASE-EMITTER VOLTAGE (V)BSTBase-Emitter ON Voltage vsCollector Current1.41.210.80.60.40.20.11I - COLLECTOR CURRENT (A)CP4P0.825 °C0.60.40.20.01125 °C- 40 ºC25 °C125 °Cβ = 100.11I - COLLECTOR CURRENT (A)C10V = 5VCE 10Collector-Cutoff Currentvs Ambient TemperatureI B O - COLLECTOR CURRENT (nA)C100V = 50VCB1010.10.01255075100125T - AMBIENT TEMPERATURE ( C)ºAP4P150AC Typical CharacteristicsJunction Capacitance vs.Reverse Bias Voltage元器件交易网www.cecb2b.com
NZT651NPN Current Driver Transistor
(continued)
AC Typical Characteristics (continued)
POWER DISSIPATION vsAMBIENT TEMPERATURE
1.2P D - POWER DISSIPATION (W)10.80.60.40.200
25
5075100
o
TEMPERATURE ( C)
125
150
SOT-223
因篇幅问题不能全部显示，请点此查看更多更全内容