METHOD OF FABRICATING MOSFET DEVICE

专利名称：METHOD OF FABRICATING MOSFET DEVICE发明人：Yong Ho OH申请号：US11926026申请日：20071028

公开号：US20080160710A1公开日：20080703

专利附图：

摘要：A method of fabricating a MOSFET device comprising forming a gate electrodepattern on a gate insulating layer on a semiconductor substrate, forming pre-source andpre-drain junction layers using a first ion implantation process on the substrate on eachside of the gate electrode pattern, respectively, forming lightly doped drain junctions by

performing a second ion implantation process on the surface of the pre-source and pre-drain junction layers, forming spacers on each side of the gate electrode pattern, andforming deep source and deep drain junction layers in the pre-source and pre-drainjunction layers by performing third ion implantation process on the area of the substratenext to the gate electrode pattern.

申请人：Yong Ho OH

地址：Incheon KR

国籍：KR

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