AP9962EH

Advanced Power Electronics Corp.▼ Low On-resistance▼ Single Drive Requirement▼ Fast Switching Speed

GSDN-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

44V25mΩ28.8A

Description

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltageapplications such as DC/DC converters. The through-hole version(AP9962EJ) are available for low-profile applications.

GD

S

TO-252(H)

G

D

S

TO-251(J)

Absolute Maximum Ratings

SymbolVDSVGS

ID@TC=25℃ID@TC=100℃IDM

PD@TC=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current1Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Rating44±2028.818.215031.30.25-55 to 150-55 to 150

UnitsVVAAAW W/℃℃℃

Thermal Data

SymbolRthj-cRthj-a

Parameter

Thermal Resistance Junction-caseThermal Resistance Junction-ambient

Max.Max.

Value4110

Units℃/W℃/W

Data and specifications subject to change without notice

200520041

AP9962EH/JElectrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=150oC)

Test Conditions

VGS=0V, ID=1mAVGS=10V, ID=16AVGS=4.5V, ID=12AVDS=VGS, ID=250uAVDS=10V, ID=16AVDS=40V, VGS=0VVDS=32V ,VGS=0VVGS=±20VID=16AVDS=35VVGS=4.5VVDS=22VID=16A

RG=3.3Ω,VGS=10VRD=1.38ΩVGS=0VVDS=25Vf=1.0MHzf=1.0MHz

Min.44---1---------------

Typ.-0.03---23---1246930174174981.7

Max.Units--25353-125±2019---------VV/℃mΩmΩVSuAuAuAnCnCnCnsnsnsnspFpFpFΩ

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

11341810

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2Reverse Recovery Time2Reverse Recovery Charge

Test Conditions

IS=16A, VGS=0VIS=16A, VGS=0V,dI/dt=100A/µs

Min.---Typ.-2622

Max.Units1.2--VnsnC

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.AP9962EH/J

12090TC=25oC10080 10VID , Drain Current (A)70TC=150oC 10V 7.0VID , Drain Current (A)80 7.0V60506040 5.0V40 5.0V3020 4.5V20 4.5VVG=3.0V0123456VG=3.0V00123456100VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics

351.632ID=12ATC=25oC1.4ID=16AVG=10V29Normalized RDS(ON)246810RDS(ON) (mΩ)1.226231.0200.817140.6-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate VoltageFig 4. Normalized On-Resistance v.s. Junction Temperature

1.41081.2Normalized VGS(th) (V)1.2IS(A)61Tj=150oC4Tj=25oC0.820.6000.20.40.60.810.4-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (C)o Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

AP9962EH/J

1410000f=1.0MHz12ID=16AVDS=22VVDS=28VVDS=35VVGS , Gate to Source Voltage (V)101000Ciss8C (pF)6Coss100Crss420051015202530101591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000110010us100usID (A)10Normalized Thermal Response (Rthjc)Duty factor=0.50.20.10.10.051ms10ms100msDCPDM0.02tTDuty factor = t/TPeak Tj = PDM x Rthjc + TC10.01TC=25oCSingle PulseSingle Pulse0.10.111010010000.010.000010.00010.0010.010.11VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS90%VGQG4.5VQGSQGD10%VGStd(on)trtd(off)tfChargeQ Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform