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Memory system with reversible resistivity-switchin

2021-01-30 来源:步旅网
专利内容由知识产权出版社提供

专利名称:Memory system with reversible resistivity-switching using pulses of alternate polarity

发明人:Peter Rabkin,George Samachisa,Roy E.

Scheuerlein

申请号:US12948388申请日:20101117公开号:US08355271B2公开日:20130115

专利附图:

摘要:A memory system includes a plurality of non-volatile storage elements thateach comprise a diode (or other steering device) in series with reversible resistance-

switching material. One or more circuits in the memory system program the non-volatilestorage elements by changing the reversible resistance-switching material of one ormore non-volatile storage elements to a first resistance state. The memory system canalso change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state byapplying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to therespective diodes (or other steering devices) such that current flows in the diodes (orother steering devices) without operating the diodes (or other steering devices) inbreakdown condition.

申请人:Peter Rabkin,George Samachisa,Roy E. Scheuerlein

地址:Cupertino CA US,San Jose CA US,Cupertino CA US

国籍:US,US,US

代理机构:Vierra Magen Marcus & DeNiro LLP

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