Semiconductor structure, semiconductor device, and

专利名称：Semiconductor structure, semiconductor

device, and method for producingsemiconductor structure

发明人：Kazutoshi Kojima,Shiyang Ji,Tetsuya

Miyazawa,Hidekazu Tsuchida,Koji

Nakayama,Tetsuro Hemmi,Katsunori Asano

申请号：US14418897申请日：20130731公开号：US09496345B2公开日：20161115

专利附图：

摘要：The present invention provides a semiconductor structure which includes atleast a p-type silicon carbide single crystal layer having an α-type crystal structure,containing aluminum at impurity concentration of 1×10cmor higher, and having thicknessof 50 μm or greater. Further provided is a method for producing the semiconductorstructure of the present invention which method includes at least epitaxial growth stepof introducing silicon carbide source and aluminum source and epitaxially growing p-typesilicon carbide single crystal layer over a base layer made of silicon carbide single crystalhaving α-type crystal structure, wherein the epitaxial growth step is performed attemperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from5×10Pa to 25×10Pa.

申请人：NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE ANDTECHNOLOGY,CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

地址：Tokyo JP,Tokyo JP

国籍：JP,JP

代理机构：Pergament & Cepeda LLP

代理人：Milagros A. Cepeda,Edward D. Pergament

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