LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR A

专利名称：LOW TEMPERATURE POLYSILICON THIN

FILM TRANSISTOR AND METHOD OFFABRICATING LIGHTLY DOPED DRAINTHEREOF

发明人：Hsi-Ming Chang申请号：US10711473申请日：20040921

公开号：US20060060919A1公开日：20060323

专利附图：

摘要：A method of fabricating a lightly doped drain region of a low temperature

polysilicon thin film transistor is provided. First, a polysilicon layer is formed over asubstrate, and then a gate insulation layer is formed over the polysilicon layer. A gatebuffer layer and a gate are formed over the gate insulation layer, wherein the gate isformed on the gate buffer layer and a portion of the gate buffer layer is exposed. Next, adoping process is performed to form the lightly doped drain region in the polysiliconlayer underneath the exposed portion of the gate buffer layer. Thus, a low temperaturepolysilicon thin film transistor is formed via a simplified process and the overallfabrication cost can be reduced and the production efficiency can be substantiallyimproved.

申请人：Hsi-Ming Chang

地址：Taoyuan County 334 TW

国籍：TW

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