IR2103资料

Data Sheet No. PD60045-N

IR2103(S)

HALF-BRIDGE DRIVER

Features

•Floating channel designed for bootstrap operationFully operational to +600V

Tolerant to negative transient voltagedV/dt immune

Gate drive supply range from 10 to 20VUndervoltage lockout

3.3V, 5V and 15V logic compatibleCross-conduction prevention logic

Matched propagation delay for both channelsInternal set deadtime

High side output in phase with HIN inputLow side output out of phase with LIN inputProduct Summary

VOFFSETIO+/-VOUTton/off (typ.)Deadtime (typ.)600V max.130 mA / 270 mA10 - 20V680 & 150 ns520 ns••••••••

PackagesDescription

The IR2103(S) are high voltage, high speed powerMOSFET and IGBT drivers with dependent high andlow side referenced output channels. Proprietary HVIC8-Lead SOICIR2103Sand latch immune CMOS technologies enable rug-8-Lead PDIPgedized monolithic construction. The logic input isIR2103compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a highpulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used todrive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.Typical Connection

up to 600VVCCVCCHINLINVBHOVSLOTOLOADHINLINCOM(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.Please refer to our Application Notes and DesignTips for proper circuit board layout.www.irf.com1

IR2103(S)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measuredunder board mounted and still air conditions.

SymbolVBVSVHOVCCVLOVINdVs/dtPDRthJATJTSTLDefinitionHigh side floating absolute voltageHigh side floating supply offset voltageHigh side floating output voltageLow side and logic fixed supply voltageLow side output voltageLogic input voltage (HIN & LIN)Allowable offset supply voltage transientPackage power dissipation @ TA ≤ +25°CThermal resistance, junction to ambientJunction temperatureStorage temperatureLead temperature (soldering, 10 seconds)(8 Lead PDIP)(8 Lead SOIC)(8 Lead PDIP)(8 Lead SOIC)Min.-0.3VB - 25VS - 0.3-0.3-0.3-0.3——————-55—Max.625VB + 0.3VB + 0.325VCC + 0.3VCC + 0.3501.00.625125200150150300UnitsVV/nsW°C/W°CRecommended Operating ConditionsThe input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within therecommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.SymbolVBVSVHOVCCVLOVINTADefinitionHigh side floating supply absolute voltageHigh side floating supply offset voltageHigh side floating output voltageLow side and logic fixed supply voltageLow side output voltageLogic input voltage (HIN & LIN)Ambient temperatureMin.VS + 10Note 1VS1000-40Max.VS + 20600VB20VCCVCC125UnitsV°CNote 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design TipDT97-3 for more details).

IR2103(S)

Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.

SymboltontofftrtfDTMTDefinitionTurn-on propagation delayTurn-off propagation delayTurn-on rise timeTurn-off fall timeDeadtime, LS turn-off to HS turn-on &HS turn-on to LS turn-offDelay matching, HS & LS turn-on/offMin.Typ.Max.UnitsTest Conditions————400—68015010050520—8202201709065060nsVS = 0VVS = 600VStatic Electrical Characteristics

VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced toCOM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

SymbolVIHVILVOHVOLILKIQBSIQCCIIN+IIN-VCCUV+VCCUV-IO+IO-DefinitionLogic “1” (HIN) & Logic “0” (LIN) input voltageLogic “0” (HIN) & Logic “1” (LIN) input voltageHigh level output voltage, VBIAS - VOLow level output voltage, VOOffset supply leakage currentQuiescent VBS supply currentQuiescent VCC supply currentLogic “1” input bias currentLogic “0” input bias currentVCC supply undervoltage positive goingthresholdVCC supply undervoltage negative goingthresholdOutput high short circuit pulsed currentOutput low short circuit pulsed currentMin.Typ.Max.UnitsTest Conditions3————————87.4130270—————301503—8.98.2210360—0.810010050552701019.89——mAVµAVmVVCC = 10V to 20VVCC = 10V to 20VIO = 0AIO = 0AVB = VS = 600VVIN = 0V or 5VVIN = 0V or 5VHIN = 5V, LIN = 0VHIN = 0V, LIN = 5VVO = 0V, VIN = VIHPW ≤ 10 µsVO = 15V, VIN = VILPW ≤ 10 µsIR2103(S)

VBQPULSEFILTERRSHODEADTIMEHINPULSEGENUVDETECTHVLEVELSHIFTVSVccVCCLINDEADTIMELOCOMLead Definitions

SymbolDescription

HINLINVB

Logic input for high side gate driver output (HO), in phaseLogic input for low side gate driver output (LO), out of phaseHigh side floating supplyHigh side gate drive outputHigh side floating supply returnLow side and logic fixed supplyLow side gate drive outputLow side return

HOVSVCCLOCOM

Lead Assignments

VBHOVSLO

1234

VCCHINLINCOM

8

765

1234

VCCHINLINCOM

VBHOVSLO

8

765

8 Lead PDIP8 Lead SOIC

IR2103IR2103S

IR2103(S)

HIN

LIN

50%50%LIN

tontr90%toff90%tfHOLOLO

10%10%50%50%HINtontr90%toff90%tfHOHINLIN50%50%10%10%Figure 2. Switching Time Waveform Definitions

90%HODT10%DT90%10%LOFigure 4. Deadtime Waveform Definitions

IR2103(S)

1400)1200sn( e1000mMax.Ti800 yale600D n400Typ.O-nru200T0-50-250255075100125Temperature (oC)1000Max.sn( 800emiT y600aleTyp.D n400O-nruT200002468101214161820Input Voltage (V)Figure 6C. Turn-On Time vs Input Voltage500)sn( 400emTi y300Max.aleD f200fO-nruT100Typ.0101214161820VBIAS Supply Voltage (V)Figure 7B. Turn-Off Time vs Supply Voltage140012001000Max.800600Typ.4002000101214161820500400300200Max.100Typ.0-50-250255075100125Temperature (oC)Figure 7A. Turn-Off Time vs Temperature1000sn(800 emiT 600yaleDMax. 400ffO-nr200uTTyp002468101214161820Input Voltage (V)Figure 7C. Turn-Off Time vs Input Voltage500)sn400( emTi300 esiR 200nMax.O-nru100TTyp.0-50-250255075100125Temperature (oC)Figure 9A. Turn-On Rise Timevs Temperature200150100Max.50Typ.0-50-250255075100125Temperature (oC)140012001000800Max.600Typ.400200Min.0-50-250255075100125IR2103(S)

500)sn400( emTi300 esiMax.R n200O-nruT100Typ.0101214161820VBIAS Supply Voltage (V)Figure 9B. Turn-On Rise Timevs Voltage200150100Max.Typ.500101214161820VBIAS Supply Voltage (V)140012001000Max.800600Typ.400200Min.0101214161820IR2103(S)

87)V6( e5gatlo4Min.V tu3pnI210Temperature (oC)-50-250255075100125Temperature (oC)Figure12A. Logic \"1\" (HIN) & Logic \"0\" (LIN)Input Voltage vs Temperature43.22.41.6Max.0.80-50-250255075100125Temperature (oC)Figure 13A. Logic \"0\"(HIN) & Logic \"1\"(LIN)Input Voltage vs Temperature10.80.60.40.2Max.0-50-250255075100125Temperature (oC)876)V( e5gatl4oMV t3Min.in.upnI210101214161820VBIAS Supply Voltage (V)Figure 12B. Logic \"1\" (HIN) & Logic \"0\" (LIN) Input Voltage vs Voltage43.22.41.6Max.0.80101214161820Vcc Supply Voltage (V)10.80.60.40.2Max.01012141618201)V( eg0.8atloV tu0.6ptuO 0.4leveL w0.2oMax.L0-50-250255075100125Temperature (oC)Figure 15A. Low Level Outputvs Temperature500400300200100Max.0-50-250255075100125Temperature (oC) Figure 16A. Offset Supply Currentvs Temperature150)Aµ(120 tnerru90C ylpp60uMax.S SB30VTyp.0-50-250255075100125Temperature (oC)Figure 17A. VBS Supply Currentvs TemperatureIR2103(S)

1)V( ega0.8tloV tu0.6ptuO l0.4eveL w0.2oMax.L0101214161820Vcc Supply Voltage (V)Figure 15B. Low Level Output vs Voltage)A500µ( tne400rruC e300gkaeL 200ylppuS100Max. tesffO00200400600800VB Boost Voltage (V)Figure 16B. Offset Supply Current vs Voltage150)Aµ( 120tnerruC90 ylppu60SMax. SBV30Typ.0101214161820VBS Floating Supply Voltage (V)Figure 17B. VBS Supply Current vs VoltageIR2103(S)

700)Aµ600( tn500erruC400 ylpp300Max.u SC200CV100Typ.0-50-250255075100125Temperature (oC)Figure 18A. Vcc Supply Currentvs Temperature30252015Max.10Max5Typ.0-50-2502550751001255432Max.10-50-250255075100125700)Aµ600( tn500erruC400 ylp300Max.pu S200CCV100Typ.0101214161820Vcc Supply Voltage (V)Figure 18B. Vcc Supply Current vs Voltage30252015Max.105Typ.01012141618205432Max.10101214161820Vcc Supply Voltage (V)11)VMax.(+10 dlohyp.se9TTyp.rhTMin. O8LVU C7CV6-50-250255075100125Temperature (oC)Figure 21A. Vcc Undervoltage Threshold(+)vs Temperature500400300Typ.200100Min.0-50-250255075100125Temperature (oC)700600500Typ.400300Min.2001000-50-250255075100125IR2103(S)

11)V(- 10dlohMax.se9rhTTTyp.yp. OL8VU CC7Min.V6-50-250255075100125Temperature (oC)Figure 21B. Vcc UndervoltageThreshold (-)vs Temperature500400300200Typ.100Min.0101214161820VBIAS Supply Voltage (V)700600500400Typ.300200100Min.0101214161820IR2103(S)8-Lead PDIP01-601401-3003 01 (MS-001AB)DA5BFOOTPRINT8X 0.72 [.028]DIMAbINCHESMIN.0532.013.0075.189.1497MAX.0688.0098.020.0098.1968.1574MILLIMETERSMIN1.350.100.330.194.803.80MAX1.750.250.510.255.004.00A1.0040c6E8765H0.25 [.010] A6.46 [.255]DEee1HKL8X 1.78 [.070]1234.050 BASIC.025 BASIC.2284.0099.016 0°.2440.0196.050 8°1.27 BASIC0.635 BASIC5.800.250.40 0°6.200.501.27 8°6Xee13X 1.27 [.050]yAC0.10 [.004] yK x 45°8X b0.25 [.010] A1CAB8X L78X cNOTES:1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.8-Lead SOIC 01-602701-0021 11 (MS-012AA)