专利名称：Semiconductor device having fin field effect
transistor and manufacturing methodthereof
发明人：Keizo Kawakita申请号：US11896719申请日：20070905
公开号：US20080061383A1公开日：20080313
专利附图：
摘要：A semiconductor device in which the concentration of the electric field at upperend portions (corner portions) of a fin-shaped active region is eased and deterioration of
the threshold voltage of the FinFET is suppressed, and that has a high current drivingperformance, and a manufacturing method thereof are provided. The semiconductordevice comprising: a fin-shaped active region having a top surface and side surfaces; agate electrode covering the active region; a first gate insulating film formed between thetop surface of the active region and the gate electrode; and a second gate insulating filmformed between the side surfaces of the active region and the gate electrode, whereinthe first gate insulating film is thicker than the second gate insulating film, and adielectric constant of the first gate insulating film is higher than that of the second gateinsulating film.
申请人：Keizo Kawakita
地址：Tokyo JP
国籍：JP
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