TSAL7600
Vishay Semiconductors
High Power Infrared Emitting Diode,RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
•Package type: leaded•Package form: T-1¾•Dimensions (in mm): ∅ 5•Peak wavelength: λp = 940 nm•High reliability•High radiant power•High radiant intensity
•Angle of half intensity: ϕ = ± 30°
94 8389
•Low forward voltage
•Suitable for high pulse current operation•Good spectral matching with Si photodetectors
DESCRIPTION
TSAL7600 is an infrared, 940 nm emitting diode inGaAlAs/GaAs technology with high radiant power molded ina clear, untinted plastic package.
•Lead (Pb)-free component in accordance withRoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
•Infrared remote control units with high power requirements•Free air transmission systems
•Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENTTSAL7600
Ie (mW/sr)
25
ϕ (deg)± 30
λP (nm)940
tr (ns)800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODETSAL7600
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETERReverse voltageForward currentPeak forward currentSurge forward currentPower dissipationJunction temperatureOperating temperature rangeStorage temperature rangeSoldering temperature
Thermal resistance junction/ambientNote
Tamb = 25 °C, unless otherwise specified
Document Number: 81015Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
127
t ≤ 5 s, 2 mm from caseJ-STD-051, leads 7 mm soldered
on PCB
tp/T = 0.5, tp = 100 µs
tp = 100 µsTEST CONDITION
SYMBOL
VRIFIFMIFSMPVTjTambTstgTsdRthJA
VALUE51002001.5160100- 40 to + 85- 40 to + 100
260230
UNITVmAmAAmW°C°C°C°CK/W
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TSAL7600
Vishay Semiconductors
High Power Infrared Emitting Diode,RoHS
Compliant, 940 nm, GaAlAs/GaAs
18012010080PV - Power Dissipation (mW)1601401201008060402000102030405060708090100IF - Forward Current (mA)RthJA = 230 K/W60402000102030405060708090100RthJA = 230 K/W21211Tamb - Ambient Temperature (°C) 21212Tamb - Ambient Temperature (°C)Fig. 1 - Power Dissipation Limit vs. Ambient TemperatureFig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETERForward voltage
Temperature coefficient of VFReverse currentJunction capacitanceRadiant intensityRadiant power
Temperature coefficient of φeAngle of half intensityPeak wavelengthSpectral bandwidth
Temperature coefficient of λpRise timeFall time
Virtual source diameter
Note
Tamb = 25 °C, unless otherwise specified
IF = 100 mAIF = 100 mAIF = 100 mAIF = 100 mAIF = 100 mATEST CONDITIONIF = 100 mA, tp = 20 msIF = 1 A, tp = 100 µs
IF = 1 mAVR = 5 V
VR = 0 V, f = 1 MHz, E = 0IF = 100 mA, tp = 20 msIF = 1 A, tp = 100 µsIF = 100 mA, tp = 20 ms
IF = 20 mA
SYMBOL
VFVFTKVFIRCjIeIeφeTKφeϕλpΔλTKλptrtfd
15120
252520035- 0.6± 30940500.28008001.8
75
MIN.
TYP.1.352.6- 1.8
10MAX.1.63
UNITVVmV/KµApFmW/srmW/srmW%/Kdegnmnmnm/Knsnsmm
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For technical questions, contact: emittertechsupport@vishay.comDocument Number: 81015
Rev. 1.7, 04-Sep-08
元器件交易网www.cecb2b.com
TSAL7600
High Power Infrared Emitting Diode,RoHS Vishay Semiconductors
Compliant, 940 nm, GaAlAs/GaAs
BASIC CHARACTERISTICS
Tamb = 25°C, unless otherwise specified
110 1000 IF - Forward Current (A)Φe- Radiant Power (mW)IFSM= 1 A (Single Pulse)tp/T = 0.01100 010 0.05 0.1 0.5 10 1 1.0 -110 10-296 1198710-110010110213602 0.1 010 tp- Pulse Duration (ms) 12310 10 10 IF- Forward Current (mA)410 Fig. 3 - Pulse Forward Current vs. Pulse DurationFig. 6 - Radiant Power vs. Forward Current
104IF - Forward Current (mA)1.6 103Ie rel;Φe rel 1.2 IF = 20 mA0.8 102tP = 100 µstP/T = 0.0011010.4 10013600012340140 - 100 100 1050 94 7993VF - Forward Voltage (V)T amb- Ambient Temperature (°C)Fig. 4 - Forward Current vs. Forward VoltageFig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000Ie- Radiant Intensity (mW/sr)Φ- Relative Radiant Powererel1.251001.00.75100.510.25IF = 100 mA08909409900.110014255101102103IF- Forward Current (mA)10414291λ- Wavelength (nm)Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81015Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
129
元器件交易网www.cecb2b.com
TSAL7600
Vishay Semiconductors
High Power Infrared Emitting Diode,RoHS
Compliant, 940 nm, GaAlAs/GaAs
10°20°30°0°Ierel- Relative Radiant Intensity40°1.00.90.80.750°60°70°80°0.60.40.200.20.40.694 8011Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
20327
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For technical questions, contact: emittertechsupport@vishay.comDocument Number: 81015
Rev. 1.7, 04-Sep-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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