专利名称：POWER SEMICONDUCTOR DEVICES发明人：MADATHIL, Sankara, Narayanan,
Ekkanath,GREEN, David, William
申请号：EP06794778.8申请日：20061016公开号：EP1946380A2公开日：20080723
摘要：A power semiconductor device including source and drain regions located in alateral arrangement in a first portion of the device, and at least one current providing celllocated in a second portion of the device and spaced apart from the first portion at leastby a substrate region of a first conductivity type.
申请人：ECO Semiconductors Limited
地址：2 Wilmington Court, Glebe Road Leicester LE2 2LD GB
国籍：GB
代理机构：Lambert, Ian Robert
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