Dynamic random access memory having a vertical tra

专利名称：Dynamic random access memory having a

vertical transistor

发明人：Jong S. Kim,Hee-Koo Yoon,Chung G. Choi申请号：US08/269218申请日：19940630公开号：US05504357A公开日：19960402

摘要：A DRAM having a vertical transistor of a highly integrated semiconductor deviceand its manufacturing method are disclosed. A DRAM has a silicon substrate, a word lineformed in a silicon substrate, a gate oxide layer formed on the side wall of the word line,a bit line junction region formed on the bottom of a silicon substrate, a bit line that isconnected to the a bit line junction region and is insulated from the word line via a firstinsulating layer, a charge storage electrode junction region formed near the bottom ofsilicon substrate surface, a pad polysilicon layer that is insulated from the a word line viaa second insulating layer and is connected at the top of a charge storage electrodediffusion region, and a charge storage electrode that is connected to the pad polysiliconlayer through a contact. Accordingly, a channel region is formed on a silicon substratepositioned on the side wall of a word line by applying the voltage to the word line andthus a signal transmitter is mutually transferred from the bit line to the charge storageelectrode.

申请人：HYUNDAI ELECTRONICS INDUSTRIES, CO., LTD.

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