专利名称：Dynamic RAM storage techniques发明人：John Turner申请号：US11451847申请日：20060612
公开号：US20060245238A1公开日：20061102
专利附图：
摘要：Dynamic RAM (DRAM) cells are provided. Data can be read from a DRAM cellwithout draining the stored charge stored in the cell. During a read cycle, current flowsbetween a Read Bit line and a supply voltage, and charge is not drained directly from theDRAM storage node. Each DRAM cell has a small number of transistors. The DRAM cell
can be used to store configuration data on a programmable integrated circuits (IC). Passgates are used on programmable ICs to drive signals across the chip. Data stored inDRAM cells is provided directly to the pass gates at the full supply voltage to preventsignal degradation.
申请人：John Turner
地址：Santa Cruz CA US
国籍：US
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