专利名称：Wafer and method of working the same发明人：Hisashi Maejima,Hiroshi Nishizuka,Susumu
Komoriya,Etuo Egashira
申请号：US06/830754申请日：19860219公开号：US04783225A公开日：19881108
摘要：A wafer having chamfered bent portions in the joint regions between thecontour of the wafer and the cut-away portion of the wafer such as an orientationflatness. The chipping of the wafer can be prevented, and in coating the wafer with aphotoresist, forming an epitaxially grown layer on the wafer, etc., films having desiredcharacteristics can be provided on the surface of the wafer.
申请人：HITACHI, LTD.
代理机构：Antonelli, Terry & Wands
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容