专利名称：High reliability die processing发明人：Whitney, Brad P.,Mach, Richard申请号：EP93106587.4申请日：19930422公开号：EP0567937A2公开日：19931103
专利附图：
摘要：A hermetic die includes a bond pad which extends the high temperature rangecapability of plastic encapsulated devices. The die preferably includes a layer of fieldoxide (56) grown on selected areas of a silicon wafer (50). A barrier metal layer (70) isformed to extend laterally from a first point to a second point on oxide (56). Aluminumbond pad layer (74) is formed over barrier metal layer (70). Compressive nitride layer (26)is then formed over exposed areas of field oxide (56), extending laterally interior thelateral edges of layer (70) and pad (74). A second barrier metal layer (80) comprisingtitanium tungsten is deposited over pad layer (74) followed by the deposition of goldbond pad layer (84).
申请人：TEXAS INSTRUMENTS INCORPORATED
地址：13500 North Central Expressway Dallas Texas 75265 US
国籍：US
代理机构：Schwepfinger, Karl-Heinz, Dipl.-Ing.
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