专利名称:Circuit and method for controlling buffers in
semiconductor memory device
发明人:Ki Hyung Ryoo,Young Jin Yoon申请号:US10005877申请日:20011207
公开号:US20020083289A1公开日:20020627
专利附图:
摘要:Disclosed inventions include circuits and methods for controlling a plurality ofdata input buffers and a plurality data strobe buffers in a semiconductor memory device.High speed operation can be achieved by operating the plurality of data input buffers
and the plurality of data strobe buffers in response to a buffer control signal generatedfaster than an input data, synchronized with internal rising and falling clock signals. A firstinternal falling clock signal generator generates a first internal falling clock signal inresponse to an external clock signal. A first internal rising clock signal generatorgenerates a first internal rising clock signal in response to the external clock signal. Abuffer controller generates a buffer control signal in response to the first and falling andrising clock signals. The plurality of data input buffers and the plurality of data strobebuffer are enabled or disabled in response to the buffer control signal.
申请人:RYOO KI HYUNG,YOON YOUNG JIN
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