专利名称：METHOD OF FABRICATION OF AI/GE
BONDING IN A WAFER PACKAGINGENVIRONMENT AND A PRODUCTPRODUCED THEREFROM
发明人：Steven S. Nasiri,Anthony Francis Flannery, JR.申请号：US12184231申请日：20080731
公开号：US20080283990A1公开日：20081120
专利附图：
摘要：A method of bonding of germanium to aluminum between two substrates to
create a robust electrical and mechanical contact is disclosed. An aluminum-germaniumbond has the following unique combination of attributes: (1) it can form a hermetic seal;(2) it can be used to create an electrically conductive path between two substrates; (3) itcan be patterned so that this conduction path is localized; (4) the bond can be made withthe aluminum that is available as standard foundry CMOS process. This has the significantadvantage of allowing for wafer-level bonding or packaging without the addition of anyadditional process layers to the CMOS wafer.
申请人：Steven S. Nasiri,Anthony Francis Flannery, JR.
地址：Saratoga CA US,Los Gatos CA US
国籍：US,US
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