METHOD OF TREATING SEMICONDUCTOR SUBSTRATE SURFACE

专利名称：METHOD OF TREATING SEMICONDUCTOR

SUBSTRATE SURFACE AND DEVICETHEREFOR

发明人：WATANABE, TOHRU,OKUMURA, KATSUYA申请号：EP91904335申请日：19910220公开号：EP0469157A4公开日：19930210

摘要：For avoiding the pollution and destruction of semiconductor substrate, andnecessary processing is executed, it is not necessary that in heating furnace, only surfaceheating substrate pacifies oxidation by the mixed gas of flame combustion hydrogen andoxygen to clause or reduction treatment can be by the hydrogen and oxygen of changeratio. Device used in the method, including one first conduit (6) for introducing hydrogen,second conduit (7) introduces oxygen, flame generating means (5) passes downwardlythrough burning hydrogen and oxygen mix for generating flame, and untreatedsemiconductor substrate (1) is compared in the diameter of wider range, flow velocityregulating measure (8), these first and second spools of intermediate (9) offer adjust flowvelocity respectively and flow separately through gas therein, carrying means (2), (3), (14)it also provides a kind of in the untreated semiconductor substrate of flame generatingmeans carrying.

申请人：KABUSHIKI KAISHA TOSHIBA

地址：72, HORIKAWA-CHO SAIWAI-KU; KAWASAKI-SHI KANAGAWA-KEN 210

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