专利名称：Method for correcting characteristics of
attenuated phase-shift mask
发明人：Katsuhiro Takushima申请号：US10300777申请日：20021121公开号：US06800214B2公开日：20041005
专利附图：
摘要：A method for correcting characteristics of an attenuated phase-shift maskhaving an attenuated layer including (a) storing a data in a memory, which shows acorrelation between characteristics and process conditions, (b) measuring the
characteristics of the attenuated phase-shift mask, (c) calculating a appropriate processcondition from the result of the step (b) and the data stored in the memory; and (d)soaking the attenuated phase-shift mask into a liquid solution for a certain time-that iscalculated in the step (c) to change thickness and composition of the attenuated layer.
申请人：OKI ELECTRIC INDUSTRY CO., LTD.
代理人：Junichi Mimura
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