CZRB3036资料

Surface MountZenerDiodeCOMCHIPwww.comchip.com.twCZRB3011ThruCZRB3100

Voltage: 11 - 100 VoltsPower: 3.0 Watt

Features - For surface mountedapplications inorder tooptimize boardspace - Low profilepackage - Built-in strainrelief - Glass passivatedjunction - Low inductance - Excellent clampingcapability - Typical I less than 1uA above 11VD - High temperaturesoldering 260°C/10seconds atterminals - Plastic packagehas underwriterslaboratoryflammability classification94V-OSMB/DO-214AA0.083(2.11)0.075(1.91)0.185(4.70)0.160(4.06)0.155(3.94)0.130(3.30)0.012(0.31)0.006(0.15)0.096(2.44)0.083(2.13)0.050(1.27)0.030(0.76)0.008(0.20)0.203(0.10)0.220(5.59)0.200(5.08)Mechanical data- Case: JEDECDO-214AA,Molded plasticover passivatedjunction - Terminals: Solderplated, solderableper MIL-STD-750, method2026 - Polarity: Colorband denotespositive end(cathode) exceptBidirectional -Standard Packaging: 12mm tape (EIA-481) -Weight: 0.002 ounce, 0.064 gramDimensionsin inchesand(maillimeter)Maximum Ratings and Electrical Characterics Ratings at 25°C ambient temperature unless otherwise specified.RatingPeak Pulse Power Dissipation (Note A)Derate above 75Peak forward Surge Current 8.3ms single half sine-wave superimposedon rated load (JEDEC Method) (Note B)Operating Junction and Storage Temperature RangeSymbolPDIFSMTJ,TSTGValue32415-55 to +150UnitsWattsmW/°CAmps°CMDS0303002APage 1元器件交易网www.cecb2b.com

Surface Mount Zener DiodeCOMCHIPwww.comchip.com.twELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)Nominal Zener Device Voltage VZ (Note 1.)@ IZT (Note 2.)(Volts) Test current IZT (mA)Maximum Zener Impedance (Note 3.)ZZT @ IZT ZZK @ IZK (Ohms)(Ohms)Leakage CurrentIR(uA)IZK (mA)VR(Volts) Surge Maximum Current Zener @TA=25°C Current IZM (Note 4.) MadcIr - mACZRB3011CZRB3012CZRB3013CZRB3014CZRB3015CZRB3016CZRB3017CZRB3018CZRB3019CZRB3020CZRB3022CZRB3024CZRB3027CZRB3028CZRB3030CZRB3033CZRB3036CZRB3039CZRB3043CZRB3047CZRB3051CZRB3056CZRB3062CZRB3068CZRB3075CZRB3082CZRB3091CZRB3100111213141516171819202224272830333639434751566268758291100686358535047444240373431282725232119171615131211109.18.27.544.54.555.55.56677891012162022283338455055708595115160700700700700700700750750750750750750750750100010001000100015001500150020002000200020003000300030000.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.25110.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.58.49.19.910.611.412.21313.714.415.216.718.220.62122.525.127.429.732.735.638.842.647.151.75662.269.2762252462081931801691501591421351231121009690827569635753484440363330271.821.661.541.431.331.251.181.111.051.000.910.830.740.710.670.610.560.510.450.420.390.360.320.290.270.240.220.20NOTE:1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10msfrom the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual device capability is as described in Figure 3.MDS0303002APage 2元器件交易网www.cecb2b.com

Surface Mount Zener DiodeCOMCHIPwww.comchip.com.twRating and Characteristic Curves (CZRB3011Thru CZRB3100)

30TRANSIENTTHERMALRESISTANCEJUNCTION-TO-LEAD(°C/W)2010753210.70.5D=0.50.20.10.050.020.010.30.0001D=0NOTEBELOW0.1SECOND,THERMALRESPONSECURVEISAPPLICABLETOANYLEADLENGTH(L)SINGLEPULSETJL=JL(t)PPKREPETITIVEPULSESTJL=JL(t,D)PPK0.00020.00050.0010.0020.0050.010.020.050.10.20.512510Fig.2-TYPICALTHERMALRESPONSEL,PPK, PEAK SURGE POWER(WATTS)1K300200100503020RECTANGULARNONREPETITIVEWAVEFORMTJ=25°CPRIORTOINITIALPULSEIR, REVERSE LEADAGE(uAdc)@VR AS SPECIFIED IN ELEC.CHAR. TABLE5000.10.050.030.020.010.0050.0030.0020.0010.00050.00030.00020.000110.1 .2.3 5 1235 10 2050 1001251020501002005001KP.W.PULSEWIDTH(ms)NOMINALVZ(VOLTS)Fig.3-MAXIMUMSURGEPOWERTEMPERATURECOEFFICIENT(mV/°C)@IZT86420-2-43 4 6 8 10 12RANGEFig.4-TYPICALREVERSELEAKAGE200TEMPERATURECOEFFICIENT(mV/°C)@IZT100RANGE5040302010VZ,ZENERVOLTAGE@IZT(VOLTS)020406080100VZ,ZENERVOLTAGE@IZT(VOLTS)Fig.5-UNITSTO12VOLTSFig.6-UNITS10TO100VOLTSMDS0303002APage 3元器件交易网www.cecb2b.com

Surface Mount Zener DiodeCOMCHIPwww.comchip.com.twRating and Characteristic Curves (CZRB3011 Thru CZRB3100)

100100IZ, ZENER CURRENT (mA)5030201053210.50.30.20.10 1 2 3 4 5 6 7 8 9 10IZ, ZENER CURRENT (mA)5030201053210.50.30.20.10102030405060 708090 100VZ,ZENERVOLTAGE(VOLTS)VZ,ZENERVOLTAGE(VOLTS)JUNCTION-LEADTHERMALRESISTANCE(°C/W)80706050403020100PRIMARYPATHOFCONDUCTIONISTHROUGHTHECATHODELEAD0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1L,LEADLENGTHTOHEATSINK(INCH)TYPICALTHERMALRESISTANCEMDS0303002APage 4元器件交易网www.cecb2b.com

Surface Mount Zener DiodeAPPLICATION NOTE:

Since the actual voltage available from a given zenerdiode is temperature dependent, it is necessary todetermine junction temperature under any set of

operating conditions in order to calculate its value. Thefollowing procedure is recommended:

Lead Temperature, TL, should be determined from: TL = șLAPD + TA

șLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value forșLA will vary and depends on the device mounting method.șLA is generally 30-40 °C/W for the various chips and tie points in common use and for printed circuit board wiring.

The temperature of the lead can also be measured usinga thermocouple placed on the lead as close as possible tothe tie point. The thermal mass connected to the tie pointis normally large enough so that it will not significantlyrespond to heat surges generated in the diode as a resultof pulsed operation once steady-state conditions areachieved. Using the measured value of TL, the junctiontemperature may be determined by: TJ = TL + ¨TJL

COMCHIPwww.comchip.com.tw¨TJL is the increase in junction temperature above thelead temperature and may be found from Figure 2 for atrain of power pulses or from Figure 10 for dc power.

¨TJL = șLAPD

For worst-case design, using expected limits of Iz, limitsof PD and the extremes of TJ (¨TJL ) may be estimated.Changes in voltage, Vz, can then be found from:

¨V = șVZ¨TJ

șVZ , the zener voltage temperature coefficient, isfound from Figures 5 and 6.

Under high power-pulse operation, the zener voltagewill vary with time and may also be affected significantlybe the zener resistance. For best regulation, keep currentexcursions as low as possible.

Data of Figure 2 should not be used to compute surgecapability. Surge limitations are given in Figure 3. Theyare lower than would be expected by considering onlyjunction temperature, as current crowding effects causetemperatures to be extremely high in small spots resultingin device degradation should the limits of Figure 3 beexceeded.

MDS0303002APage 5