Final dataSPP03N60C3, SPB03N60C3SPA03N60C3VDS @ TjmaxRDS(on)ID6501.43.2
VΩA
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• High peak current capability• Improved transconductance
P-TO220-3-31123P-TO220-3-31P-TO263-3-2P-TO220-3-1• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
TypeSPP03N60C3SPB03N60C3SPA03N60C3
PackageP-TO220-3-1P-TO263-3-2
Ordering CodeQ67040-S4401Q67040-S4391
Marking03N60C303N60C303N60C3
P-TO220-3-31-
Maximum RatingsParameter
Continuous drain current
TC = 25 °CTC = 100 °C
SymbolID
3.22
ID pulsEASEARIARVGSVGSPtotTj , Tstg
9.61000.23.2±20±3038
ValueSPP_B
SPA 3.21)21)9.61000.23.2±20±3029.7
UnitA
Pulsed drain current, tp limited by TjmaxAvalanche energy, single pulse
ID=2.4A, VDD=50V
AmJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD=50V
Avalanche current, repetitive tAR limited by TjmaxGate source voltage staticGate source voltage AC (f >1Hz)Power dissipation, TC = 25°C
Operating and storage temperature
AVW°C
-55...+150
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Final dataMaximum RatingsParameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
SPP03N60C3, SPB03N60C3SPA03N60C3Symboldv/dt
Value50
UnitV/ns
Thermal CharacteristicsParameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAKThermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAKSMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 3)Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Electrical Characteristics, at Tj=25°C unless otherwise specifiedParameter
Symbol
Conditions
min.
Drain-source breakdown voltageV(BR)DSSVGS=0V, ID=0.25mADrain-Source avalancheV(BR)DSVGS=0V, ID=3.2Abreakdown voltageGate threshold voltageZero gate voltage drain current
VGS(th)IDSS
ID=135µA, VGS=VDSVDS=600V, VGS=0V,Tj=25°CTj=150°C
Symbol
min.
RthJC RthJC_FPRthJARthJA_FPRthJA
---- --Tsold
-
Valuestyp.---- -35-max.3.34.16280 62-260
UnitK/W
°C
Valuestyp.-7003 0.5-- 1.263.810
max.--3.9 170100 1.4--600-2.1 --- ---
UnitV
µA
Gate-source leakage current
IGSS
VGS=30V, VDS=0VVGS=10V, ID=2ATj=25°CTj=150°C
nAΩ
Drain-source on-state resistanceRDS(on)
Gate input resistance
RG
f=1MHz, open drain
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Final dataElectrical CharacteristicsParameterTransconductanceInput capacitanceOutput capacitance
Reverse transfer capacitance
SymbolgfsCissCossCrss
VGS=0V, VDS=0V to 480V
SPP03N60C3, SPB03N60C3SPA03N60C3Conditions
min.
VDS≥2*ID*RDS(on)max, ID=2A
VGS=0V, VDS=25V, f=1MHz
Valuestyp.3.440015051226736412
max.--------10020
------
UnitSpF
Effective output capacitance,5)Co(er)energy related
Effective output capacitance,6)Co(tr)time relatedTurn-on delay timeRise time
Turn-off delay timeFall time
Gate Charge CharacteristicsGate to source chargeGate to drain chargeGate charge totalGate plateau voltage
QgsQgdQgtd(on)trtd(off)tf
VDD=350V, VGS=0/10V, ID=3.2A, RG=20Ω
----
ns
VDD=420V, ID=3.2A
----
26135.5
--17-
nC
VDD=420V, ID=3.2A, VGS=0 to 10V
V(plateau)VDD=420V, ID=3.2A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.6C is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% Vo(tr)DSS.
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Final dataElectrical CharacteristicsParameter
Inverse diode continuousforward current
Inverse diode direct current,pulsed
Inverse diode forward voltageReverse recovery timeReverse recovery chargePeak reverse recovery currentPeak rate of fall of reverse recovery current
Typical Transient Thermal CharacteristicsSymbolSPP_BRth1Rth2Rth3Rth4Rth5Rth60.0540.1030.1780.7570.6820.202TjSPP03N60C3, SPB03N60C3SPA03N60C3SymbolISISMVSDtrrQrrIrrmdirr/dt
Conditions
min.
TC=25°C
Valuestyp.--12501.815-max.3.29.61.2400-----
UnitA
VGS=0V, IF=IS VR=420V, IF=IS , diF/dt=100A/µs
-----
VnsµCAA/µs
Tj=25°C
ValueSPA0.0540.1030.1780.3560.6552.535Rth1UnitK/WSymbolCth1Cth2Cth3Cth4Cth5Cth6Rth,nTcaseValueSPP_B0.00020340.00029630.00091030.0020840.024SPA0.00020340.00029630.00091030.0044340.412Unit0.000052320.00005232Ws/K External HeatsinkPtot(t) Cth1Cth2Cth,nTambPage 4
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Final data1 Power dissipationPtot = f (TC)
40 SPP03N60C3SPP03N60C3, SPB03N60C3SPA03N60C32 Power dissipation FullPAKPtot = f (TC)
30 W W32 28 24 22 Ptot20406080100120Ptot20 18 16 14 24 20 16 12 8 4 0 012 10 8 6 4 2 °C1600 020406080100120TC °C160 TC3 Safe operating areaID = f ( VDS )
parameter : D = 0 , TC=25°C
10 1 4 Safe operating area FullPAKID = f (VDS)
parameter: D = 0, TC = 25°C
10 1 A A10 0 10 0 ID ID10 -1 tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 msDC10 -1 tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 mstp = 10 msDC10 -2 0 10 10 1 10 2 10 V VDS3
10 -2 0 10 10 1 10 2 10 V VDS3
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Final data5 Transient thermal impedanceZthJC = f (tp)parameter: D = tp/T
10 1 SPP03N60C3, SPB03N60C3SPA03N60C36 Transient thermal impedance FullPAKZthJC = f (tp)parameter: D = tp/t
10 1 K/W K/W
10 0 10 0 ZthJC10 -1 ZthJC10 -1 10 -2 D = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse10 -2 D = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp10 -1
10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1
s10 tp7 Typ. output characteristicID = f (VDS); Tj=25°Cparameter: tp = 10 µs, VGS
11 8 Typ. output characteristicID = f (VDS); Tj=150°Cparameter: tp = 10 µs, VGS
6 A9 8 ID6 5 4 3 2 1 0 0 ID7 20V7V6.5V6V5.5V5V4.5V4V A4 20V7V6V5.5V5V4.5V4V3.5V3 2 1 481216 V240 0481216 V24 VDS VDSPage 6
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Final data9 Typ. drain-source on resistanceRDS(on)=f(ID)
parameter: Tj=150°C, VGS
10 SPP03N60C3, SPB03N60C3SPA03N60C310 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 2 A, VGS = 10 V
8 SPP03N60C3 Ω8 7 6 5 4V4.5V5V5.5V6V6.5V8V20VΩRDS(on) RDS(on)6 5 4 3 4 3 2 1 02 98%typ1 123456 A ID80 -60-202060100°C180Tj11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)maxparameter: tp = 10 µs
11 12 Typ. gate chargeVGS = f (QGate)
parameter: ID = 3.2 A pulsed
16 SPP03N60C3 A25°CV9 8 12 ID7 6 VGS150°C10 0,2 VDS max0,8 VDS max8 5 4 3 2 1 0 02468101214162 6 4 V20 VGS0 0246810121416nC20QGatePage 7
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Final data13 Forward characteristics of body diodeIF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPP03N60C3SPP03N60C3, SPB03N60C3SPA03N60C314 Typ. switching time
t = f (ID), inductive load, Tj=125°Cpar.: VDS=380V, VGS=0/+13V, RG=20Ω
100 nsA80 10 0 70 60 50 40 10 -1 IF tTj = 25 °C typTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)10 -2 00.40.81.21.622.4V330 20 10 0 0td(off)tftd(on)tr0.511.522.5VSD3.5 A ID15 Typ. switching time
t = f (RG), inductive load, Tj=125°Cpar.: VDS=380V, VGS=0/+13V, ID=3.2 A
500 16 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°Cpar.: VDS=380V, VGS=0/+13V, ID=3.2A
1500 ns400 350 300 250 200 150 100 50 0 0 A/µs
1200 1050 di/dttd(off)tftd(on)tr900 750 600 450 di/dt(on) t300 150 0 0di/dt(off)20406080100120140160 Ω200 RG4080120160220 Ω RGPage 8
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Final data17 Typ. drain source voltage slopedv/dt = f(RG), inductive load, Tj = 125°Cpar.: VDS=380V, VGS=0/+13V, ID=3.2A
90 SPP03N60C3, SPB03N60C3SPA03N60C318 Typ. switching lossesE = f (ID), inductive load, Tj=125°Cpar.: VDS=380V, VGS=0/+13V, RG=20Ω
0.01 V/ns
mWs
0.008 0.007 *) Eon includes SDP06S60 diode commutation losses.70 dv/dt60 E0.006 0.005 Eon*50 40 30 20 dv/dt(off)Eoffdv/dt(on)0.004 0.003 0.002 0.001 0 010 0 020406080100120140160 Ω200 RG0.511.522.53.5 A ID19 Typ. switching lossesE = f(RG), inductive load, Tj=125°Cpar.: VDS=380V, VGS=0/+13V, ID=3.2A
0.06 20 Avalanche SOAIAR = f (tAR)par.: Tj ≤ 150 °C
3.5 mWs
0.048 *) Eon includes SDP06S60 diode commutation losses. AEoffTj(START)=25°C2.5 0.042 E0.036 Eon* IAR2 1.5 Tj(START)=125°C1 0.5 0 -3 10 0.03 0.024 0.018 0.012 0.006 0 0-2 -1 0 1 2 4
4080120160220 Ω RG10 10 10 10 10 µs10 tARPage 9
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Final data21 Avalanche energy EAS = f (Tj)
par.: ID = 2.4 A, VDD = 50 V
120 720 SPP03N60C3, SPB03N60C3SPA03N60C322 Drain-source breakdown voltageV(BR)DSS = f (Tj)
SPP03N60C3
VmJEAS80 V(BR)DSS°C680 660 640 60 620 40 600 580 20 560 0 20540 -60406080100120160-202060100°C180TjTj23 Avalanche power lossesPAR = f (f )
parameter: EAR=0.2mJ
200 24 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4 W160 140 120 100 80 60 40 20 0 4 10 5 6
pF10 3 Ciss PAR C10 2 Coss10 1 Crss10 Hz f10 10 0 0100200300400 V600 VDSPage 10
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Final data25 Typ. Coss stored energyEoss=f(VDS)
2.5 µJssEo 1.5 1 0.5 0 0100200300400 V600 VDSDefinition of diodes switching characteristics
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Final dataP-TO-220-3-1
10±0.43.7±0.2BA1.27±0.134.44SPP03N60C3, SPB03N60C3SPA03N60C315.38±0.62.8±0.2C5.23±0.913.5±0.53x0.75±0.11.17±0.222x2.540.25M0.5±0.12.51±0.2ABCAll metal surfaces tin plated, except area of cut.Metal surface min. x=7.25, y=12.3P-TO-263-3-2 (D2-PAK)
9.98±0.480.05Page 12
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SPP03N60C3, SPB03N60C3Final dataP-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
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Final dataSPP03N60C3, SPB03N60C3SPA03N60C3Published by
Infineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München
© Infineon Technologies AG 1999All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.
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