MEMORY STRUCTURE WITH A PROGRAMMABLE RESISTIVE ELE

专利名称：MEMORY STRUCTURE WITH A

PROGRAMMABLE RESISTIVE ELEMENT ANDITS MANUFACTURING PROCESS

发明人：Pascale Mazoyer,Germain Bossu申请号：US12425223申请日：20090416

公开号：US20090267046A1公开日：20091029

专利附图：

摘要：A memory structure has an access transistor connected in series with aprogrammable resistive element, wherein the programmable resistive element

comprises on a semiconductor substrate; an insulated layer with a cavity comprising: afirst layer lining the lateral surfaces and the bottom of the said cavity and impermeableto the diffusion of metal; a second layer made of porous material on the said first layer; athird layer of metallic material allowing to realize a contact electrode susceptible tospread within the said formed porous material of the second layer. Diffusion of metallicions within the said second layer is controlled by the joint action of an electric field andtemperature. A manufacturing process is also described.

申请人：Pascale Mazoyer,Germain Bossu

地址：Domene FR,Grenoble FR

国籍：FR,FR

更多信息请下载全文后查看