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ZVN3306A资料

2020-07-02 来源:步旅网
N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94FEATURES*60 Volt VDS*RDSon)=5Ω

ZVN3306AD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETERDrain-Source VoltageContinuous Drain Current at Tamb=25°CPulsed Drain CurrentGate-Source Voltage Power Dissipation at Tamb=25°COperating and Storage Temperature RangeSYMBOLVDSIDIDMVGSPtotTj:TstgVALUE602703± 20625-55 to +150UNITVmAAVmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERDrain-Source BreakdownVoltageGate-Source ThresholdVoltageGate-Body LeakageZero Gate Voltage DrainCurrentOn-State Drain Current(1)Static Drain-Source On-StateResistance (1)SYMBOLMIN.BVDSSVGS(th)IGSSIDSSID(on)RDS(on)1503525857687505600.82.4200.550MAX.UNITCONDITIONS.VVnAµAµAmAΩmSpFpFpFnsnsnsnsVDD ≈18V, ID=500mAVDS=18V, VGS=0V, f=1MHzID=1mA, VGS=0VID=1mA, VDS= VGSVGS=± 20V, VDS=0VVDS=60V, VGS=0VDS=48V, VGS=0V, T=125°C(2)VDS=18V, VGS=10VVGS=10V,ID=500mAVDS=18V,ID=500mAForward Transconductance(1)(2gfs)Input Capacitance (2)Common Source OutputCapacitance (2)Reverse Transfer Capacitance(2)Turn-On Delay Time (2)(3)Rise Time (2)(3)Turn-Off Delay Time (2)(3)Fall Time (2)(3)CissCossCrsstd(on)trtd(off)tf(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%3-375

2) Sample test.

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ZVN3306ATYPICAL CHARACTERISTICSVGS=10V9V ID(On) -On-State Drain Current (Amps)8V0.80.60.40.27V6V5V4V3V 00246810VDS-Drain Source Voltage (Volts)1.0108642ID=1A0.5A0.25A 00246810VDS - Drain Source Voltage (Volts)VGS -Gate Source Voltage (Volts)Saturation Characteristics Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) ID(On) -On-State Drain Current (Amps)1.0VDS=10V0.80.60.40.210 5ID=1A0.5A0.25A 00246810 111020VGS-Gate Source Voltage (Volts)VGS-Gate Source Voltage (Volts)Transfer Characteristics On-resistance vs gate-source voltage 2.4gfs-Forward Transconductance (mS)Normalised RDS(on)and VGS(th) 2.22.01.81.61.41.21.00.80.60.4-80-60-40-20ID=-0.5ADre Rcerou-Sain Rceantsis n)(oDS200180160140120100806040 20 000.10.20.30.40.50.60.70.80.91.0 VDS=18VGate Threshold Voltage VGS(th) 020406080100120140160T-Temperature (C°)ID(on) - Drain Current (Amps)Normalised RDS(on)and VGS(th)vs Temperature Transconductance v drain current 3-376

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ZVN3306ATYPICAL CHARACTERISTICS20050gfs-Transconductance (mS) C-Capacitance (pF) 180160140120100806040 20 0012345678910 VDS=18V403020 10 001020304050CossCrssCissVGS-Gate Source Voltage (Volts)VDS-Drain Source Voltage (Volts)Transconductance v gate-source voltage VDD=20V30V 50V ID=800mACapacitance v drain-source voltage VGS-Gate Source Voltage (Volts) 161412108642000.20.40.60.81.01.21.41.61.82.02.22.4Q-Charge (nC)Gate charge v gate-source voltage 3-377

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