®SD56120
RF POWER TRANSISTORS
The LdmoST FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs sEXCELLENT THERMAL STABILITYsCOMMON SOURCE CONFIGURATION,PUSH-PULL
sPOUT = 100 W PEP WITH 13 dB GAIN @ 860MHz
sBeO FREE PACKAGE
DESCRIPTION The SD56120 is a common source N-Channelenhancement-mode lateral Field-Effect RF powertransistor designed for broadband commercialand industrial applications at frequencies up to1.0 GHz. The SD56120 is designed for high gainand broadband performance operating incommon source mode at 28V. It is ideal forbroadcast applications from 470 to 860 MHzrequiring high linearity.
M246epoxy sealedORDER CODE BRANDING SD56120 XSD56120 PIN CONNECTION 1. Drain 4. Gate 2. Drain 5. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
SymbolVGSIDPDISSTjTSTGParameterGate-Source VoltageDrain CurrentPower Dissipation (@ Tc= 70oC)Max. Operating Junction TemperatureStorage TemperatureValue65± 2014260200-65 to 150UnitVVAWooV(BR)DSSDrain Source VoltageCCTHERMAL DATA
Rth(j-c)Junction-Case Thermal Resistance0.5oC/WNovember 19991/4
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SD56120
ELECTRICAL SPECIFICATION (Tcase = 25 oC)STATIC (Per Section)
SymbolV(BR)DSSIDSSIGSSVGS(Q)VDS(ON)GFSCISSCOSSCRSSParameterVGS = 0V IDS = 10 mA VGS = 0V VDS = 28 VVGS = 20V VDS = 0 VVDS = 28V ID = 100 mAVGS = 10V ID = 3 AVDS = 10V ID = 3 AVGS = 0V VDS = 28 V f = 1 MHzVGS = 0V VDS = 28 V f = 1 MHzVGS = 0V VDS = 28 V f = 1 MHz3.00.7388441.7Min.65115.00.8Typ.Max.UnitVµAµAVVmhopFpFpFDYNAMIC
SymbolPOUTGPSηDIMDParameterVDD = 28V f = 860 MHz IDQ = 400 mAVDD = 28 V Pout = 100W PEP IDQ = 400 mA VDD = 28 V Pout = 100W PEP IDQ = 400 mA VDD = 28 V Pout = 100W PEP IDQ = 400 mA 5:1Min.10013303631Typ.Max.UnitWdB%dBVSWRLoadf = 860 MHz VDD = 28 V Pout = 100W PEPMismatchIDQ = 400 mA ALL PHASE ANGLES Note : f1 = 860 MHz f2 = 860.1 MHz
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SD56120
M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) MECHANICAL DATAmmMIN.ABCDEFGHIJKL28.8316.264.190.081.831.403.185.336.4817.275.7222.8629.0816.765.080.152.241.653.431.1350.6400.1650.0030.0720.0550.125TYP.MAX.5.596.7318.295.97MIN.0.2100.2550.6800.2250.9001.1450.6600.2000.0060.0880.0650.135inchTYP.MAX.0.2200.2650.7200.235DIM.Controlling dimension : Inches7145054A3/4元器件交易网www.cecb2b.com
SD56120
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 1999 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.http://www.st.com. 4/4
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