Co-fabrication of vertical diodes and fin field ef

专利名称：Co-fabrication of vertical diodes and fin field

effect transistors on the same substrate

发明人：Karthik Balakrishnan,Kangguo Cheng,Pouya

Hashemi,Alexander Reznicek

申请号：US15087495申请日：20160331公开号：US09780088B1公开日：20171003

专利附图：

摘要：A method of forming a vertical finFET and vertical diode device on the samesubstrate, including forming a channel layer stack on a heavily doped layer; forming fin

trenches in the channel layer stack; oxidizing at least a portion of the channel layer stackinside the fin trenches to form a dummy layer liner; forming a vertical fin in the fintrenches with the dummy layer liner; forming diode trenches in the channel layer stack;oxidizing at least a portion of the channel layer stack inside the diode trenches to form adummy layer liner; forming a first semiconductor segment in a lower portion of the diodetrenches with the dummy layer liner; and forming a second semiconductor segment in anupper portion of the diode trenches with the first semiconductor segment, where thesecond semiconductor segment is formed on the first semiconductor segment to form ap-n junction.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

地址：Armonk NY US

国籍：US

代理机构：Tutunjian & Bitetto, P.C.

代理人：Vazken Alexanian

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