专利名称：ARSENIC DOPED SEMICONDUCTOR LIGHT
EMITTING DEVICE AND ITS MANUFACTURE
发明人：Wataru TAMURA,Tatsuma Saito申请号：US12535985申请日：20090805
公开号：US20100034230A1公开日：20100211
专利附图：
摘要：A semiconductor light emitting device includes: a substrate; a first clad layerformed above the substrate and made of AlGaInP mixed crystal of a first conductivitytype; an active layer formed on the first clad layer and made of AlGaInP mixed crystal;and a second clad layer formed on the active layer and made of AlGaInP mixed crystal ofa second conductivity type opposite to the first conductivity type, wherein the first cladlayer and the second clad layer each have a band gap wider than a band gap of the activelayer, and at least one of the active layer and the first and second clad layers is dopedwith arsenic at an impurity concentration level not changing the band gap. Carboncapturing is suppressed, and surface morphology is suppressed from being degraded.
申请人：Wataru TAMURA,Tatsuma Saito
地址：Kawasaki-shi JP,Tokyo JP
国籍：JP,JP
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