专利名称：Semiconductor device having a gate contact
structure capable of reducing interfacialresistance and method of forming the same
发明人：Chang-Seok Kang,Yoo-Cheol Shin,Jung-Dal
Choi,Jong-Sun Sel,Ju-Hyung Kim,Sang-HunJeon
申请号：US11797401申请日：20070503公开号：US07776687B2公开日：20100817
专利附图：
摘要：A semiconductor device has a gate contact structure, including a semiconductorsubstrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middleconductive layer, a top metal layer having an opening exposing the polycrystalline siliconlayer, and a contact plug directly contacting the polycrystalline silicon layer through theopening.
申请人：Chang-Seok Kang,Yoo-Cheol Shin,Jung-Dal Choi,Jong-Sun Sel,Ju-HyungKim,Sang-Hun Jeon
地址：Seongnam-si KR,Suwon-si KR,Suwon-si KR,Yongin-si KR,Yongin-si KR,Yongin-si KR
国籍：KR,KR,KR,KR,KR,KR
代理机构：Lee & Morse P.C.
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