专利名称：CVD plasma assisted lower dielectric
constant SICOH film
发明人：Seon-Mee Cho,Peter Wai-Man Lee,Chi-I
Lang,Dian Sugiarto,Chen-An Chen,Li-QunXia,Shankar Venkataraman,Ellie Yieh
申请号：US11044246申请日：20050127公开号：US07153787B2公开日：20061226
专利附图：
摘要：A low dielectric constant film having silicon-carbon bonds and dielectricconstant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectricconstant film is deposited by reacting a cyclic organosilicon compound and an aliphaticorganosilicon compound with an oxidizing gas while applying RF power. The carboncontent of the deposited film is between about 10 and about 30 atomic percentexcluding hydrogen atoms, and is preferably between about 10 and about 20 atomicpercent excluding hydrogen atoms.
申请人：Seon-Mee Cho,Peter Wai-Man Lee,Chi-I Lang,Dian Sugiarto,Chen-An Chen,Li-Qun Xia,Shankar Venkataraman,Ellie Yieh
地址：Santa Clara CA US,San Jose CA US,Sunnyvale CA US,Sunnyvale CA US,Milpitas CAUS,Santa Clara CA US,Santa Clara CA US,San Jose CA US
国籍：US,US,US,US,US,US,US,US
代理机构：Patterson and Sheridan
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