专利名称：Contact forming method for semiconductor
device
发明人：Young-Hoon Park,Jin-Hun Lee,Myoung-Hee
Han,Hyo-Dong Ban,Eun-Young Min,Won-HeeJang
申请号：US09971778申请日：20011004
公开号：US20020068423A1公开日：20020606
专利附图：
摘要：A contact forming method of a semiconductor device is disclosed, in which a pad
polysilicon layer is formed at an active region of a cell array, thereafter an upper portionof a gate is opened when a spacer of a NMOS transistor region is formed. And at thesame time a gate capping insulating layer of the cell array region, the active region of theNMOS transistor and the gate node contact region remains at a predetermined thicknessby etching the spacer. And then, by performing an ion implantation procedure on theentire surface, the direct pad polysilicon layer and the buried pad polysilicon layer aresimultaneously ion-implanted.
申请人：PARK YOUNG-HOON,LEE JIN-HUN,HAN MYOUNG-HEE,BAN HYO-DONG,MINEUN-YOUNG,JANG WON-HEE
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