2SB649A-D-AB3-R资料

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 󰂄 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A PNP SILICON TRANSISTOR 1 SOT-891 TO-1261TO-126C 1TO-92*Pb-free plating product number: 2SB649L/2SB649AL 󰂄 ORDERING INFORMATION Order Number Pin AssignmentPackagePacking Normal Lead Free Plating 1 2 3 2SB649-x-AB3-R 2SB649L-x-AB3-R SOT-89B CETape Reel 2SB649-x-T6C-K 2SB649L-x-T6C-K TO-126CE CBBulk 2SB649-x-T60-K 2SB649L-x-T60-K TO-126E CBBulk 2SB649-x-T92-B 2SB649L-x-T92-B TO-92 E CBTape Box 2SB649-x-T92-K 2SB649L-x-T92-K TO-92 E CBBulk 2SB649A-x-AB3-R 2SB649AL-x-AB3-R SOT-89B CETape Reel 2SB649A-x-T6C-K 2SB649AL-x-T6C-K TO-126CE CBBulk 2SB649A-x-T60-K 2SB649AL-x-T60-K TO-126E CBBulk 2SB649A-x-T92-B 2SB649AL-x-T92-B TO-92 E CBTape Box 2SB649A-x-T92-K 2SB649AL-x-T92-K TO-92 E CBBulk 2SB649L-x-AB3-R(1)Packing Type(2)Package Type(3)Rank(4)Lead Plating(1) B: Tape Box, K: Bulk, R: Tape Reel(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T92: TO-92(3) x: refer to Classification of hFE(4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D 元器件交易网www.cecb2b.com

2SB649/A PNP SILICON TRANSISTOR 󰂄 ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLRATING UNIT Collector-Base Voltage VCBO -180 V 2SB649-120 Collector-Emitter Voltage VCEO V 2SB649A-160 Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK)-3 A TO-126/TO-126C1.4 W Collector Power Dissipation PD TO-92 1 W SOT-89 500 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNITCollector to Base Breakdown Voltage BVCBOIC=-1mA, IE=0 -180 V Collector to Emitter Breakdown 2SB649 -120 BVCEOIC=-10mA, RBE=∞ V Voltage 2SB649A-160 Emitter to Base Breakdown Voltage BVEBOIE=-1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-160V, IE=0 -10µAhFE1 VCE=-5V, IC=-150mA (note) 60 3202SB649 hFE2 VCE=-5V, IC=-500mA (note) 30 DC Current Gain hFE1 VCE=-5V, IC=-150mA (note) 60 2002SB649A hFE2 VCE=-5V, IC=-500mA (note) 30 Collector-Emitter Saturation Voltage VCE(SAT)Ic=-600mA, IB=-50mA -1 V Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5V Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHzOutput Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pFNote: Pulse test. 󰂄 CLASSIFICATION OF hFE RANK B C D RANGE 60-120 100-200 160-320 www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R204-006,D 元器件交易网www.cecb2b.com

2SB649/A 󰂄 TYPICAL CHARACTERISTICS Typical Output Characteristecs.5PNP SILICON TRANSISTOR Typical Transfer Characteristics

-500Collector Current, IC(mA)VCE=-5V-100

Ta=75℃1.0Collector Current, IC(A)0.80.60.40.2

0-4.5-3..0-35-2.-2.0-4.5-5.0-5TC=25℃0W=2PD-1.0-0.5mAIB=0-10

0-10-20-30-40-50

-1

0

Collector to Emitter Voltage, VCE(V)

-0.2-0.4-0.6-0.8-1.0Base to Emitter Voltage, VBE(V)Collector to Emitter Saturation Voltagevs. Collector Current25-25-1.5 350DC Current Transfer Ratio, hFEDC Current Transfer Ratiovs. Collector CurrentCollector to Emitter Saturation Voltage, VCE(SAT) (V)300250200150100501-1VCE=-5V5℃Ta=725℃-25℃-1.2-1.0-0.8-0.6-0.4-0.20IC=10 IBT℃75=C-10-100-1,000-1-10-100Collector Current, IC(mA)Collector Current, IC(mA)25-25-1,000 1.2Base to Emitter Saturation Voltage, VBE(SAT) (V)Base to Emitter Saturation Voltagevs. Collector CurrentIC=10IBTC=-257525℃240Gain Bandwidth Product, fT(MHz)Gain Bandwidth Productvs. Collector CurrentVCE=5VTa=25℃1.00.80.60.40.2012001601208040010310301003001,000Collector Current, IC(mA)301003001,000Collector Current, IC(mA) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 of 4 QW-R204-006,D 元器件交易网www.cecb2b.com

2SB649/A 󰂄 TYPICAL CHARACTERISTICS(Cont.) Collector Output Capacitancevs. Collector to Base VoltagePNP SILICON TRANSISTOR Area of Safe Operation-3ICmax-1.0-0.3-0.1-0.03-0.01-1-3Collector Output Capacitance, Cob (pF) 200Collector Current, IC(A)10050201052-1f=1MHzIE=0(-13.3V, -1.5A)(-40V, -0.5A)2SB649ADC Operation (TC=25℃)(-120V, -0.038A)(-160V,- 0.02A)2SB649-10-30-100-300-3-10-30-100Collector to Base Voltage, VCB(V) 󰀁󰀁󰀁󰀁󰀁󰀁Collector to Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 of 4 QW-R204-006,D