Method for manufacturing a bonded wafer

专利名称：Method for manufacturing a bonded wafer发明人：Sakai, Masahiro, c/o Research &

Development Dept.,,Nakano, Masatake, c/oSemiconductor Isobe Research,Mitani,Kiyoshi, c/o Isobe Research

申请号：EP97301487.1申请日：19970305公开号：EP0797248A3公开日：19971126

专利附图：

摘要：A method for manufacturing a bonded wafer comprises the steps of: mirror-

polishing a surface of first (1) and second (2) substrates, bringing the mirror-polishedsurfaces of the substrates (1,2) into contact with one another to join them together, andsubjecting the substrates (1,2) to a heat treatment to firmly bond them. An insulatinglayer (3) may be formed on one surface prior to joining. One of the surfaces of the firstand second substrates (1,2) prior to bonding, or one surface of the bonded wafer issubjected to polishing treatment in which irregularities on a rear surface of the onesubstrate or the figure of the surface of a polishing plate which is in contact with the rearsurface of the one substrate exerts little influence on its surface finish.

申请人：Shin-Etsu Handotai Kabushiki Kaisha

地址：4-2 Marunouch 1-chome Chiyoda-ku Tokyo 100 JP

国籍：JP

代理机构：Rackham, Stephen Neil

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