AO3499 SOT-23-3L PMOS Vds-20V规格书AO推荐

AO349920V P-Channel MOSFETGeneral Description• Low RDS(ON)• RoHS and Halogen-Free CompliantProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection-20V-3.5A< 85mΩ< 102mΩ< 140mΩHBM Class 2Applications• Load switch• PWMSOT23Top View Bottom View D DDG SGSGSAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolDrain-Source VoltageVDSGate-Source VoltageContinuous DrainCurrentPulsed Drain Current CTA=25°CPower Dissipation BMaximum-20±12-3.5-2.8-171.40.9-55 to 150UnitsVVAVGSCTA=25°TA=70°CIDIDMTA=70°CPDTJ, TSTGW°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient AMaximum Junction-to-Ambient A DMaximum Junction-to-LeadSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp658543Max9012560Units°C/W°C/W°C/W Rev.1.0: May 2016 www.aosmd.comPage 1 of 5 AO3499 C unless otherwise noted)Electrical Characteristics (TJ=25°SymbolParameterConditionsID=-250µA, VGS=0VVDS=-20V, VGS=0VCTJ=55°VDS=0V, VGS= ±12VVDS=VGS, ID=-250µΑVGS=-4.5V, VDS=-5VVGS=-10V, ID=-3.5ATJ=125°CRDS(ON)Static Drain-Source On-ResistanceVGS=-4.5V, ID=-3AVGS=-2.5V, ID=-1AVGS=-1.8V, ID=-0.5AgFSVSDISForward TransconductanceDiode Forward VoltageVDS=-5V, ID=-3.5AIS=-1A,VGS=0V-0.5-177199851121688.6-0.76-1-1.5325VGS=0V, VDS=-10V, f=1MHzVGS=0V, VDS=0V, f=1MHz633711.23VGS=-4.5V, VDS=-10V, ID=-3.5A0.61.111VGS=-10V, VDS=-10V, RL=2.8Ω,RGEN=3ΩIF=-3.5A, dI/dt=100A/µs5.5228114.3171085119102140-0.85Min-20-1-5±10-1.2TypMaxUnitsVµAµAVAmΩmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnCSTATIC PARAMETERSDrain-Source Breakdown VoltageBVDSSIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERSInput CapacitanceCissCossCrssRgOutput CapacitanceReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQgTotal Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrrGate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-3.5A, dI/dt=100A/µsA. The value of RθJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design.

B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJAis the sum of the thermal impedance from junction to lead RθJLand lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOESNOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TOIMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2016 www.aosmd.comPage 2 of 5 AO3499 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30

-10V

2520-ID(A)1510500

1

2

3

4

5

-VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

170

Normalized On-Resistance140RDS(ON)(mΩ)110

VGS=-4.5V

805020

0

2

4

6

8

-ID(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

VGS=-10V

00

1

2

3

4

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

-2.5VVGS=-2.0V

-4.5V

9

-3.5V

-ID(A)612

VDS=-5V

3

125°C

25°C

1.60

VGS=-2.5V

ID=-3.5A, VGS=-10V

1.40

ID=-3A, VGS=-4.5V

1.20

ID=-1A, VGS=-2.5V

1.00

0.80

0

25

50

75

100

125

150

175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

180

ID=-3.5A

150RDS(ON)(mΩ)1.0E+011.0E+001.0E-01-IS(A)125°C

125°C

1.0E-021.0E-03

25°C

120

90

6025°C

1.0E-041.0E-05

300.0

2.0

4.0

6.0

8.0

-VGS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

0.00.20.40.60.81.01.2

-VSD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev.1.0: May 2016 www.aosmd.comPage 3 of 5 AO3499 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS5VDS=-10VID=-3.5A450Capacitance (pF)Ciss3006004-VGS(Volts)321150Coss00

1

2

3

4

5

Qg(nC)

Figure 7: Gate-Charge Characteristics100.0

00

Crss5

10

15

20

-VDS(Volts)

Figure 8: Capacitance Characteristics

1000

10µs

10.0

TJ(Max)=150°CTA=25°C

Power (W)100

-ID(Amps)RDS(ON) limited

100µs1ms10ms

1.0

0.1

DC

TJ(Max)=150°CTA=25°C

0.1

1

10

100ms10s

10

0.00.01

100

1

0.00001

0.0010.1101000

-VDS(Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)

10

ZθJANormalized Transient Thermal ResistanceD=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJARθJA=125°C/W1

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

1

PDM

Ton10

T

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.1.0: May 2016 www.aosmd.comPage 4 of 5 AO3499 Gate Charge Test Circuit & Waveform

VgsQg-10VVDCVDCDUTVgsIgResistive Switching Test Circuit & Waveforms

RLVdsVgsVgsRgVgsVdsDUTVDCDiode Recovery Test Circuit & WaveformsVds +DUTVgstrrVds -IsdVgsLVDC+Vdd--VdsIg Rev.1.0: May 2016 +Charge

tontd(on)trtd(off)tofftf+--+-Vds

QgsQgdVdd90%10%Q = - Idtrr-Isd-IFdI/dt-IRMVddwww.aosmd.comPage 5 of 5