BU406

SILICON NPN SWITCHING TRANSISTOR

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SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR

VERY HIGH SWITCHING SPEED

APPLICATIONS: sHORIZONTAL DEFLECTION FORMONOCHROME TV DESCRIPTION The BU406 is a silicon epitaxial planar NPNtransistor in Jedec TO-220 plastic package.

It is a fast switching device for use in horizontaldeflection output stages of large screens MTVreceivers with 110o CRT.

TO-220123INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVCBOVCEVVCEOVEBOICICMICMIBPtotTstgTjJune 1997

ParameterCollector-Base Voltage (IE = 0)Collector-Emitter Voltage (VBE = -1.5 V)Collector-Emitter Voltage (IB = 0)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak Current (repetitive)Collector Peak Current (tp = 10 ms)Base CurrentTotal Dissipation at Tc ≤ 25 oCStorage TemperatureMax. Operating Junction TemperatureValue400400200671015460-65 to 150150UnitVVVVAAAAWoCoC1/4

BU406

THERMAL DATA

Rthj-caseRthj-ambThermal Resistance Junction-case MaxThermal Resistance Junction-ambient Max2.0870ooC/WC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

SymbolICESParameterCollector Cut-offCurrent (VBE = 0)Emitter Cut-off Current(IC = 0)Collector-emitterSaturation VoltageBase-emitterSaturation VoltageTransition-FrequencyTurn-off TimeSecond BreakdownCollector CurrentTest ConditionsVCE =400 VVCE =250 V Tcase = 150oCVCE =250 V VEB = 6 VIC = 5 A IB = 0.5 AIC = 5 A IB = 0.5 AIC = 0.5 A VCE = 10VIC = 5 A IBend = 0.5 AVCE = 40 V t = 10 ms4100.75Min.Typ.Max.51001111.2UnitmAµAmAmAVVMHzµsAIEBOVCE(sat)∗VBE(sat)∗fTtoff∗∗Is/b∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2/4

BU406

TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 1.27 0.050 16.4 0.645P011C3/4

BU406

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . .4/4