专利名称：Cylindrical semiconductor capacitor发明人：Yang Pan申请号：US09846070申请日：20010430
公开号：US20010026002A1公开日：20011004
摘要：A cylindrical semiconductor capacitor is provided which starts by taking an oxidelayer which is formed over a semiconductor substrate and simultaneously removing acylindrical volume and a toroidal volume around the cylindrical volume. The removedcylindrical and toroidal volumes are filled with a copper/tantalum nitride conductor toform a metal cylinder and ring. An oxide ring between the conductive cylinder and ring isremoved. A high dielectric constant material is formed to replace the oxide ring betweenthe metal cylinder and ring to form a cylindrical capacitor. Additional oxide material isdeposited, patterned, and filled with copper/tantalum nitride conductor a to make a firstconnection to the metal ring, and a further dielectric is deposited, patterned, and filledwith additional copper/tantalum nitride conductor to form a second connection to themetal cylinder.
申请人：PAN YANG
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