专利名称：Structure and method for reducing floating
body effect of SOI MOSFETs
发明人：Qingqing Liang,Huilong Zhu,Zhijiong
Luo,Haizhou Yin
申请号：US12700797申请日：20100205公开号：US08815660B2公开日：20140826
专利附图：
摘要：The present invention generally relates to a semiconductor structure andmethod, and more specifically, to a structure and method for reducing floating body
effect of silicon on insulator (SOI) metal oxide semiconductor field effect transistors(MOSFETs). An integrated circuit (IC) structure includes a SOI substrate and at least oneMOSFET formed on the SOI substrate. Additionally, the IC structure includes an
asymmetrical source-drain junction in the at least one MOSFET by damaging a pn junctionto reduce floating body effects of the at least one MOSFET.
申请人：Qingqing Liang,Huilong Zhu,Zhijiong Luo,Haizhou Yin
地址：Fishkill NY US,Poughkeepsie NY US,Carmel NY US,Poughkeepsie NY US
国籍：US,US,US,US
代理机构：Roberts Mlotkowski Safran & Cole, P.C.
代理人：Steven Meyers
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