+0.12.9-0.1+0.10.4-0.1Unit:mm
■ Features0.43+0.1-0.1+0.1-0.1 ● For general AF applications ● Low collector-emitter saturation voltage ●Complementary types: BC807 (PNP)2.41.31+0.10.95-0.11.920.550.1+0.1-0.1+0.05-0.010.97+0.1-0.11.Base2.Emitter
0-0.1+0.1-0.1■ Absolute Maximum Ratings Ta = 25℃Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature RangeSymbolVCBOVCEOVEBOICPCTJTstgRating504550.50.3150 -55 to 150 -Test Conditions Ic= 100 μA， IE= 0 Ic= 10 mA， IB= 0 IE= 100μA， IC= 0 VCB= 45 V , IE= 0 VEB= 4V , IC=0AW℃VUnit■ Electrical Characteristics Ta = 25℃Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Collector output capacitance Transition frequencySymbolVCBOVCEOVEBOICBOIEBO0.383.collector
Min50455TypMaxUnitV0.10.10.71.21.21004010100630 uAVCE(sat) IC=500 mA, IB=50mAVBE(sat) IC= 500 mA, IB= 50mAVBEhFE(1)hFE(2)CobfT VCE= 1V, IC= 500mA VCE= 1V, IC= 100mA VCE= 1V, IC= 500mA VCB= 10V, f=1MHz VCE= 5V, IC= 10mA,f=100MHzVpFMHz■ Classification of hfe(1)RankRangeMarkingBC817-16100-2506ABC817-25160-4006BBC817-40250-6306CBC817 NPNTransistors■ Typical Characterisitics280 Static Characteristic
1mA COMMON0.9mAEMITTERTa=25℃0.8mA0.7mA0.6mA0.5mA500 hFE ——IC
Ta=100 CoCOLLECTOR CURRENT IC (mA)240400200DC CURRENT GAIN hFE300160Ta=25 C 200o1200.4mA0.3mA0.2mA8040 IB=0.1mA002468101214161001VCE= 1V10100500COLLECTOR-EMITTER VOLTAGE VCE (V) VBEsat ——IC1.20.4COLLECTOR CURRENT IC (mA)VCEsat —— I Cβ=10COLLECTOR-EMITTER SATURATIONVOLTAGE VCEsat (V)β=10BASE-EMITTER SATURATIONVOLTAGE VBEsat (V)1.00.30.8Ta=25℃ 0.20.6Ta=100℃0.40.1 Ta=100℃Ta=25℃0.20.11101005000.00.1110100500COLLECTOR CURRENT IC (mA) —— VICBE500100COLLECTOR CURRENT IC (mA) Cob / C ——VCB / VEBibf=1MHzIE=0 / IC=0Ta=25 CCiboCOLLECTOR CURRENT IC (mA)1005010Ta=100 C Ta=25℃o CAPACITANCE C (pF)101CobVCE=1V0.10.30.40.50.60.70.80.91.010510BASE-EMITTER VOLTAGE VBE(V) ICfT ——300REVERSE VOLTAGE V (V) —— TaPc0.4TRANSITION FREQUENCY fT (MHz)COLLECTOR POWER DISSIPATION Pc (W)0.31000.2 0.1VCE=5VTa=25 C101oCOLLECTOR CURRENT IC (mA)
10 600.00255075100125150AMBIENT TEMPERATURE Ta (℃)
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