2SB1326

Transistors

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412 / 2SB1326

!Features1) Low VCE(sat).

VCE(sat) = −0.35V (Typ.)(IC/IB = −4A / −0.1A)

2) Excellent DC current gaincharacteristics.

3) Complements the 2SD2098 /2SD2118 / 2SD2097.

!External dimensions (Units : mm)

2SB13860.5±0.10.24.5+−0.11.6±0.10.21.5+−0.12SB14121.5±0.36.5±0.20.25.1+−0.1C0.50.22.3+−0.10.5±0.10.35.5+−0.1(1)(2)(3)0.4±0.11.5±0.11.0±0.20.10.4+−0.050.750.90.65±0.10.4±0.11.5±0.10.5±0.13.0±0.20.55±0.12.3±0.22.3±0.21.0±0.2!Structure

Epitaxial planar typePNP silicon transistor

ROHM : MPT3EIAJ : SC-62(1) Base(2) Collector(3) Emitter(1)(2)(3)ROHM : CPT3EIAJ : SC-63(1) Base(2) Collector(3) EmitterAbbreviated symbol: BH∗2SB13266.8±0.22.5±0.20.65Max.1.00.5±0.1(1)(2)(3)2.542.541.0514.5±0.54.4±0.20.90.45±0.1ROHM : ATV(1) Emitter(2) Collector(3) Base∗ Denotes hFE2.59.5±0.54.0±0.32.5+0.2−0.10.91.52SB1386 / 2SB1412 / 2SB1326

Transistors

!Absolute maximum ratings (Ta=25°C)

ParameterCollector-base voltageCollector-emitter voltageEmitter-base voltageCollector current2SB1386Collector power dissipation2SB14122SB1326Junction temperatureStorage temperatureTjTstgPCSymbolVCBOVCEOVEBOICLimits−30−20−6−5−100.521101150−55~+150UnitVVVA(DC)A(Pulse)∗1WWWW(TC=25°C)W∗3∗2°C°C∗1 Single pulse, Pw=10ms∗2 When mounted on a 40×40×0.7 mm ceramic board.∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.!Electrical characteristics (Ta=25°C)

ParameterCollector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cutoff currentEmitter cutoff currentCollector-emitter saturation voltageDC current transfer ratio2SB1386,2SB14122SB1326SymbolBVCBOBVCEOBVEBOICBOIEBOMin.−30−20−6−−−82120−−Typ.−−−−−−−−12060Max.−−−−0.5−0.5−1.0390390−−UnitVVVµAµAV−−MHzpFIC=−50µAIC=−1mAIE=−50µAVCB=−20VVEB=−5VIC/IB=−4A/−0.1AVCE=−2V, IC=−0.5AVCE=−6V, IE=50mA, f=30MHzVCB=−20V, IE=0A, f=1MHzConditionsVCE(sat)hFEfTCob∗∗∗Transition frequencyOutput capacitance∗Measured using pulse current.!Packaging specifications and hFE

Package CodeType2SB13862SB14122SB1326hFEPQRPQRQR−−−Basic ordering unit (pieces)T1001000TapingTL2500−TV22500−−hFE values are classified as follows :

ItemhFEP82~180Q120~270R180~3902SB1386 / 2SB1412 / 2SB1326

Transistors

!Electrical characteristic curves

-10-5COLLECTOR CURRENT : IC (A)VCE=−2V

COLLECTOR CURRENT : IC (A)-5DC CURRENT GAIN : hFE-2-1-500m-200m-100m-50m-20m-10m-5m-2m-1mTa=100°C25°C−25°C-4−50mA−45mA−40mA−35mATa=25°CmA−30Am−25−20mA−15mA

5k2k1k500200100502010Ta=25°C-3−10mAVCE=−5V-2−5mA−2V−1V-1IB=0A0-0.2-0.4-0.6-0.8-1.0-1.2-1.400-0.4-0.8-1.2-1.6-2.0-1m-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-25-5-10BASE TO EMITTER VOLTAGE : VBE (V)COLLECTOR TO EMITTER VOLTAGE : VCE (V)COLLECTOR CURRENT : IC (A)Fig.1 Grounded emitter propagationcharacteristicsFig.2 Grounded emitter output characteristicsFig.3 DC current gain vs. collector current (Ι)COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)5k2kDC CURRENT GAIN : hFEVCE=−1V DC CURRENT GAIN : hFE5k2k1k500200100502010VCE=−2V -5-2-1-0.5-0.2-0.1-0.05-0.02-0.01Ta=25°C1k500200100502010-1m-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2Ta=100°C25°C−25°CTa=100°C25°C−25°CIC/IB=50/140/1/130/110/15-5-10-1m-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-25-5-10-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2-5-10COLLECTOR CURRENT : IC (A)COLLECTOR CURRENT : IC (A)COLLECTOR CURRENT : IC (A)Fig.4 DC current gain vs. collector current (ΙΙ)Fig.5 DC current gain vs. collector current (ΙΙΙ)Fig.6 Collector-emitter saturationvoltage vs. collector current (Ι)COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)lC/lB=10lC/lB=30COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)-5-2-1-0.5-0.2-0.1-0.05-0.02-0.01

-5-2-1-0.5-0.2-0.1-0.05-0.02-0.01

-5-2-1-0.5-0.2-0.1-0.05-0.02-0.01lC/lB=40−25°C25°CTa=100°C25°CTa=100°C 25°C −25°C−25°CTa=100°C-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2-5-10-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2-5-10-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2-5-10COLLECTOR CURRENT : IC (A)COLLECTOR CURRENT : IC (A)COLLECTOR CURRENT : IC (A)Fig.7 Collector-emitter saturationvoltage vs. collector current (ΙΙ)Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ)Fig.9 Collector-emitter saturation voltage vs. collector current (IV)2SB1386 / 2SB1412 / 2SB1326

Transistors

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)TRANSEITION FREQUENCY : fT (MHz)lC/lB=50−25°C25°CTa=100°C-2-1-0.5-0.2-0.1-0.05-0.02-0.015002001005020105211251020Ta=25°CVCE=−6VCOLLECTOR OUTPUT CAPACITANCE : Cob (pF)-5

1 000

1000500Ta=25°Cf=1MHzIE=0A200100502010-0.1-0.2-2m-5m-0.01-0.02-0.05-0.1-0.2-0.5-1-2-5-10501002005001000-0.5-1-2-5-10-20-50COLLECTOR CURRENT : IC (A)EMITTER CURRENT : IE (mA)COLLECTOR TO BASE VOLTAGE : VCB (V)Fig.10 Collector-emitter saturation voltage vs. collector current (V)Fig.11 Gain bandwidth product vs. emitter currentFig.12 Collector output capacitance vs. collector-base voltageEMITTER INTPUT CAPACITANCE : Cib (pF)1000500COLLECTOR CURRENT : IC (A)Ta=25°Cf=1MHzIC=0A

100502010Ta=25°C∗Single nonrepetitive pulses0m=1Pwms0020010050521500m200m100m50m20m10mPwDC=12010-0.1-0.2-0.5-1-2-5-100.20.5125102050100200500EMITTER TO BASE VOLTAGE : VEB (V)COLLECTOR TO EMITTER VOLTAGE : −VCE (V)Fig.13 Emitter input capacitance vs. emitter-base voltageFig.14 Safe operation area (2SB1412)