Integrated circuits

专利名称：Integrated circuits

发明人：Chun Hsiung Tsai,Su-Hao Liu,Chien-Tai

Chan,King-Yuen Wong,Chien-Chang Su

申请号：US13210962申请日：20110816公开号：US08884341B2公开日：20141111

专利附图：

摘要：An integrated circuit includes a gate electrode disposed over a substrate. Asource/drain (S/D) region is disposed adjacent to the gate electrode. The S/D regionincludes a diffusion barrier structure disposed in a recess of the substrate. The diffusion

barrier structure includes a first portion and a second portion. The first portion is

adjacent to the gate electrode. The second portion is distant from the gate electrode. AnN-type doped silicon-containing structure is disposed over the diffusion barrier structure.The first portion of the diffusion barrier structure is configured to partially prevent N-type dopants of the N-type doped silicon-containing structure from diffusing into thesubstrate. The second portion of the diffusion barrier structure is configured to

substantially completely prevent N-type dopants of the N-type doped silicon-containingstructure from diffusing into the substrate.

申请人：Chun Hsiung Tsai,Su-Hao Liu,Chien-Tai Chan,King-Yuen Wong,Chien-Chang Su

地址：Xinpu Township TW,Jhongpu Township TW,Hsinchu TW,Hsinchu TW,KaohsiungTW

国籍：TW,TW,TW,TW,TW

代理机构：Lowe Hauptman & Ham, LLP

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