COMPACT BANDPASS FILTER WITH HIGH SELECTIVITY AND WIDE STOPBAND USING SLOTTED STEPPED-IMPEDANCE
2021-04-27
来源:步旅网
Vo1.29 No.1/2 NAL OF ELECTRONICS(CHINA) March 2012 COMPACT BANDPASS FII』TER WITH HIGH SELECTIVITY AND WIDE STOPBAND USING SLOTTED STEPPED.IMPEDANCE RESONATOR1 Xu Jin J Ixue Miao Chen J} n (Ministerial Key Laboratory of JGMT,Nanjing University of Science and Technology,Nanjing 210094,China) Abstract In this paper,a Slotted Stepped—Impedance Resonator fSSIR)is proposed.Due to the slots in the low—impedance section of the conventional SIR.the new resonator has a lower fundamental resonance/0 and can provide a potential finite transmission zero fz close to f0.Based on the proposed SSIR,a fourth—order Chebychev BandPass Filter fBPF)is designed at f0=l GHz.The measured results show that a better than-65 dB rejection is achieved on both the lower and the upper stopband. Moreover,the new filter has a wide 30 dB rejection upper stopband from 1.13f0 to 6.524.The fab— ricated filter exhibits a size of 0.078A ×0.062A .The new filter has a planar topology and i8 easily integrated with modern portable communication systems. Key words BandPass Filter(BPF);Stepped—Impedance Resonator(sIR);High selectivity;wide stopband CLC index TN407 DOI 10.1007/s11767—012—0780—4 I.Introduction With the rapid growth of the miniaturized portable communication systems,bandpass filter with compact size and high performance has been great in demand.For this purpose,many structures such as spiral—like resonator[ .patch—via-spiral resonator[ nator[ .However these filters suffer from complicated forms and design procedure[1,3 6 J the etched gr— oundI2- embedded bandstop resonatorsI_TJand mass ,of shorted vias[ .which limit their application in communication systems. In this paper,a Slotted SIR(SSIR)is proposed by etching the slots in the low—impedance section of .net—type /8 resonator[31.hvbrid reso— have been studied.Stepped—Impedance the conventional SIR.The new SSIR has a lower fundamental resonance and a potential finite transmission zero compared to the conventional Resonator fSIR1,as one of the most popular structure in filter design,has been received a great attention[5 8].In Ref.『51,double split—end SIR is SIR.In addition.the slots can provide an extra freedom to tune the first harmonic resonance of the introduced to reduce the resonator size while pro- viding additional transmission zeros.In Ref.『6],an additional open..stub is inserted between the low.. and high..impedance lines of the resonator to fa.. cilitate the generation of cross—coupled path and resonator.As an example a fourth—order Cheby— chev BPF is designed at f0=1 GHz.The filter is fabricated on the substrate Rogers 4003C f = 0.508 mm,E =3.55).Due to the high performance of the proposed SSIR,the new filter shows some great advantage of compact size,high selectivity, lower its resonant frequency.In Ref 7 7 J,a filter with the 8th harmonic suppression is designed by embedding the bandstop resonator into the quar— ter—wavelength SIR.By inserting several ground wide stopband and simple topology.This paper is divided into four sections and is organized as fol一 strips in the low—impedance section of SIR the size of conventional SIR can be miniaturized and the characteristic of fabrication tolerance is generatedI 1ows.Section II investigates the characteristics of the proposed SSIR.Section III gives a BPF design procedure based on SSIR.Finally,Section IV draws the brief conclusions. Manuscript received date:September 5j 2011;revised date February 23,2012. Communication author:Xu Jin,born in 1987,male,Ph.D. II. SSIR Analysis of the proposed SSIR under The basic topology folded configuration is shown in Fig.1(a).It com— with four slots in its low— prises a shorted SIR Ministerial Key Laboratory of JGMT,Nanjing University of Science and Technology,Nanjing 210094,China. Email:xujin2njust@126.com. JOURNAL OF ELECTRONICS(CHINA),Vo1.29 No.1/2,March 2012 impedance section.For the purpose of investigating its resonant property.a 50 Q microstrip tapped line is directly connected to the resonator as shown in Fig.1(b).After de—embedding the phase shitf introduced by the microstrip tapped line,Fig.2 gives the calculated input impedance(related to ) and input admittance(related to. )under the physical dimensions chosen as 11--10 mm, :0.5 mm,w =3 mm w2=0.2 mm,s=0.3 mm,g=0.3 mm,d=0.4 mm, 。=2.2,h=O.508 mm[ .In Fig.2 the fundamental resonance of the conventional SIR without slots is also given.It can be seen that the fundamental resonance is apparently lower from 1.34 GHz to 1.05 GHz due to the effect ofthe slots. Furthermore,the proposed resonator has a poten— tial transmission zero at 1.22 GHz. (a)Proposed SSIR (b)SSIR with tapped lilie Fig.1 Proposed SSIR and its tapped line confia guration a 2 {呈;C 2 S /Im( u) l 5 ,一一・一 ……~^ ∞ 0 )m,/ f f I a 0 l --——SSIR 2 ——SIR 一 ^ 鲁 0 5 Im(Zi 。) 4量 ) 0 r 厂 6 0 5 l ● 8 0 0 5 1 1 5 2 2 5 3 Frequency(GHz) Fig.2 Input impedance and admittance of the proposed SSIR and the conventional SIR. It is known that and of the SIR can be tuned bv its impedance ratio[9,10].TO further ob— serve the impact of the slots g and numbers N on fl/fo,and fz/f0,a parameter study is done as shown in Fig.3.It can be seen that as口increases,the ratio of fl/fo increases firstly and then decreases.AsⅣ increases,f0 moves towards the lower frequency while fllfo increases.In addition,it is interesting that the potential transmission zero 1 is close to (around fz/f0=1.15)and do not change dramatically with the physical parameter. 4 6 4 0 ≤3.4 2 8 姜2 2 1 6 1.0 0 0 1 0 2 0 3 0 4 0 5 5 O l 3 4 0 l 2 g 3.0 lll 2.0 l 0 1 0 O 9 2 3 4 5 6 7 8 9 Ⅳ (b)Naffects onfll/o andk/l, Fig.3 Impact of the slots 9 and numbers N oil and { | If the fundamental resonance and the first harmonic resonance are speciifed as 1 GHz and 4.3 GHz,respectively,then,the physical parame— ters can be adjusted. can be mainly tuned by f1 while{ can be tuned by w w2{and 9.The op— timized physical parameters of the resonator are given as :1.13 mm,Wl=2.7 mm, =0.2 mm, ll=10.39 mm, =0.65 min 口=0.3 mm,and d= 0.4 mm.Under these physical sizes.SSIR has a potential transmission zero at 1.15 GHz. III.Fourth-order Chebychev BPF De— slgn Fig.4 depicts the layout of the designed fourth— order Chebychev BPF based on proposed SSIRs. Tapped lines are directly connected to the first and fourth resonators used as the input/output ports.t indicates the position of the tapped line,g12 indi— cates the gap size between the first and second XU et a1.Compact Bandpass Filter with High Selectivity and Wide Stopband Using Slotted Stepped—impedance・・- 25 resonators while g23 indicates the gap size between the second and third resonators.The fourth—order IV. Simulation and Measurement Re suits The simulated and measured results of the fabricated filter are plotted in Fig.6.Good agree— ment can be observed between simulation and measurement and there are some discrepancies due to the fabrication error.The measured results show that the fabricated filter has a center frequency of Chebychev low—pass filter prototype with a ripple of 0.04321 dB and Fractional BandWidth(FBW) 0f 12.5%is applied to the iflter design.The lumped circuit element values of the lowpass prototype iflter are found to be g0=l,gl=0.9314,g2=1.292, g3=1.5775.g4=O.7628.and g5:1.221lll1.The inter— stage coupling coefficients k and the external quality factor can be calculated using the fol— 1 GHz with FBW 0f 12.6%.The minimum meas— ured insertion loss is 3.1 dB while the measured lowing equations. 923 Fig.4 Layout of the proposed fourth—order Chebychev BPF =FBw/ (1a) i=gogl/FBw (1b) 。=gNgⅣ+ /FBW (1c) The calculated inter—stage coupling coefficients and the external quality factor are kl2= 4=0.115, 3=0.088, i= 。=7.39.Fig.5 shows the coupling coefficients and the external quality with respect to the corresponding physical parameters which are extracted by the fu11一wave EM simulator HFSS. t(irlY1]) 3 5 4 5 5 5 6.5 0 35 O 30 O 25 —:0 20 霹 0 15 0 1O O 05 0 00 O 2 0 4 0 6 0.8 g12,g23 ram) Fig.5 Extracted coupling coefficient and the external quality factor return loss is better than 13 dB over the whole passband.The deterioration of the insertion lOSS may due to the dielectric loss and fine transmission lines used.The proposed filter has a deep rejection M (<一55 dB)upper stopband from 1.26f0 to 4.2 . The first harmonic frequency is measured around 4.3 GHz and without any extra measurements,it can be suppressed below一30 dB due to the im— pedance mismatch at the harmonic frequency.Thus a wide一30 dB rejection stopband is achieved from 1.13 to 6.52 .The size of the fabricated filter is 0.078A。×0.062A ̄,where 。is the guided wave— length of 50Q line on the substrate at f0.Tab.1 shows the size and performance of the proposed iflter compared to some other compact and high performance BPFs.Obviously,the proposed BPF has several advantages of simpler topology,corn— pacter size and a wider——30 dB rejection stopband. In addition.1ess vias are used.Photograph of the fabricated filter is shown in Fig.7. Tab.1 Filter performance comparison V. Conclusion In this paper,a compact fourth—order microstip bandpass filter is presented by using the proposed SSIRs.Due to the high performance of the pro— posed resonator,the new filter exhibits the ad- vantages of compact size(0.078 ̄g×0.062Ag),high selectivity,deep rejection(better than 65 dB)and 加 8 6 口一吕 岂 一一日≯ 26 JOURNAL OF ELECTRONICS(CHINA),Vo1.29 No.1/2,March 2012 a wide一30 dB rejection stopband from 1.13fo to 6.52 ̄.Therefore.the proposed filter will be very attractive in the design of high isolation and compact diplexer. 0 0 —20 1.0 一 ∞ ∞ 2—40 一20 —— 60 30 —80 40 0 5 0 7 0 9 1 1 1 3 1 5 Frequency(GHz) (a)Narrow—band response O 2O 4O -60 ~80 0 1 2 3 4 5 6 7 Frequency(GHz) (b) ̄Videband reponse Fig.6 Simulated and measured S-parameters Fig 7 Photograph of the fabricated filter References 1] K.X.Ma,K.S.Yeo,J.G.Ma,et a1..An ultra— compact hairpin bandpass filter with additional zero points.IEEE Microwave and Wireless Components Letters,17(2o07)4,262~264. 2] S.C.Lin.C.H.Wang.and C.H.Chen.Novel patch— via-spiral resonators for the development of minia— turized bandpass iflters with transmission zeros.IEEE Transactions on Microwave Theory and Techniques, 55(2007)1.137—146. 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