Method of making CMOS devices on strained silicon

专利名称：Method of making CMOS devices on

strained silicon on glass

发明人：Jong-Jan Lee,Jer-Shen Maa,Douglas J.

Tweet,Yoshi Ono,Sheng Teng Hsu

申请号：US11060878申请日：20050218

公开号：US20060189111A1公开日：20060824

专利附图：

摘要：A method of making CMOS devices on strained silicon on glass includespreparing a glass substrate, including forming a strained silicon layer on the glass

substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer;depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicongate; implanting ions to form a LDD structure; depositing and forming a spacer dielectricon the gate structure; implanting and activation ions to form source and drain structures;depositing a layer of metal film; annealing the layer of metal film to form salicide on thesource, drain and gate structures; removing any unreacted metal film; depositing a layerof interlayer dielectric; and forming contact holes and metallizing.

申请人：Jong-Jan Lee,Jer-Shen Maa,Douglas J. Tweet,Yoshi Ono,Sheng Teng Hsu

地址：Camas WA US,Vancouver WA US,Camas WA US,Camas WA US,Camas WA US

国籍：US,US,US,US,US

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