METHOD OF MAKING A SEMICONDUCTOR DEVICE INCLUDING

专利名称：METHOD OF MAKING A SEMICONDUCTOR

DEVICE INCLUDING A POLYIMIDE RESISTFILM

发明人：ROBERT NICHOLAS EPIFANO,EUGENE LEON

JORDAN

申请号：US3700497D申请日：19700408公开号：US3700497A公开日：19721024

摘要：1,230,421. Semi-conductor devices. RCA CORPORATION. 29 Aug., 1968 [15 Sept.,1967], No. 41248/68. Heading H1K. Electrical contact to regions of planar semiconductordevices is made through holes in a polyimide film lying directly on the semiconductorsurface or on an intervening silicon oxide or silicon nitride passivating film. As shown, atransistor and two resistors are formed by diffusion into an epitaxial semi-conductor filmon a substrate of lower resistivity. Aluminium bonding pads 20, 28 and interconnectionsare deposited to lie on and extend through the oxide passivation 18. A layer of uncuredpolyimide 301 is then applied and contact holes dissolved through this using photoresistmasking. After removal of the photoresist the resin is heat cured and nickel layers 38, 40formed in the contact holes by evaporation. The device is then dipped in a lead-tin solderbath to produce raised contacts 42, 44 ready for \" flipchip\" bonding. In a generally similarembodiment there are two polyimide layers-one of them replaces the oxide passivation18.

申请人：RCA CORP.

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