专利名称：METHOD AND APPARATUS FOR
ELIMINATION OF PARASITIC BIPOLARACTION IN COMPLEMENTARY OXIDESEMICONDUCTOR (CMOS) SILICON ONINSULATOR (SOI) CIRCUITS
发明人：STORINO, Salvatore, N.,DAVIES, Andrew,
Douglas
申请号：EP00908385.8申请日：20000127公开号：EP1159757A1公开日：20011205
摘要：The present invention is an apparatus and method for eliminating parasiticbipolar transistor action in a Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS)device. In accordance with the invention a SOI electronic device and an active dischargingdevice coupled to said SOI electronic device is provided to deactivate the parasitic bipolartransistor. The parasitic bipolar transistor action is deactivated by controlling the
conduction of an active discharging device, said active discharging device being coupled tosaid SOI device.
申请人：International Business Machines Corporation
地址：New Orchard Road Armonk, NY 10504 US
国籍：US
代理机构：Moss, Robert Douglas
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