Apparatus and method for monitoring a thickness of

专利名称：Apparatus and method for monitoring a

thickness of a silicon wafer with a highlydoped layer

发明人：Martin Schoenleber,Christoph Dietz申请号：US14198566申请日：20140305公开号：US09230817B2公开日：20160105

专利附图：

摘要：Apparatus for monitoring a thickness of a silicon wafer with a highly-dopedlayer at least at a backside of the silicon wafer is provided. The apparatus has a source

configured to emit coherent light of multiple wavelengths. Moreover, the apparatuscomprises a measuring head configured to be contactlessly positioned adjacent thesilicon wafer and configured to illuminate at least a portion of the silicon wafer with thecoherent light and to receive at least a portion of radiation reflected by the silicon wafer.Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluationdevice. The evaluation device is configured to determine a thickness of the silicon waferby analyzing the radiation reflected by the silicon wafer by an optical coherence

tomography process. The coherent light is emitted multiple wavelengths in a bandwidthb around a central wavelength w.

申请人：Precitec Optronik GmBH

地址：Neu-Isenburg DE

国籍：DE

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