专利名称：Cryogenic capacitors发明人：Otward M. Mueller,Eduard K.
Mueller,Michael J. Hennessy
申请号：US10875458申请日：20040624公开号：US07126810B1公开日：20061024
专利附图：
摘要：This invention describes a means by which performance characteristics ofcapacitors can be improved. This is achieved by reducing the temperature, preferably butnot exclusively to cryogenic temperatures below 100 K. This is based on the observation
that the dielectric strength, dielectric losses and plate losses in many capacitors, such asfilm capacitors, improve as the temperature is decreased. A cryogenic capacitor bank isalso described, which exhibits energy densities up to four times those of conventional,room-temperature capacitor banks. Cryogenic capacitors can be combined withcryogenically operated semiconductors or with superconductors in such a way as toreduce the size, weight, and losses of a complete system.
申请人：Otward M. Mueller,Eduard K. Mueller,Michael J. Hennessy
地址：96 Sweet Rd. Ballston Lake NY 12019 US,20 McCormicks La. Ballston Lake NY12019 US,9 Patroon Pl. Ballston Lake NY 12019 US
国籍：US,US,US
代理人：Leonard Cooper
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